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Dy2Ga2Ni5Sn

Alexandria ALEX

Alex-ID: agm005137282 · Space group: P4/mbm (#127)

Basic Information

Formula
Dy2Ga2Ni5Sn
Alex-ID
agm005137282
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
323.12
ų
Cell a
3.5373
Å
Cell b
9.5575
Å
Cell c
9.5575
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Dy2Ga2Ni5Sn
Dy
4.00 · 20.0%
Ga
4.00 · 20.0%
Ni
10.00 · 50.0%
Sn
2.00 · 10.0%

Energy & Stability

Energy above hull
0.1633
eV/atom
Formation energy
-0.3955
eV/atom
Corrected total energy
-104.2870
eV
Raw total energy
-104.2870
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
13.6391
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D5_50_spg127

Decomposition

DyGa2Ni3 DyGaNi4 Ga9Ni13 DyNiSn

Computed at

2022-07-15 02:20:23.416253

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005137282).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005137282
data_agm005137282
_cell_length_a     3.53734
_cell_length_b     9.55746
_cell_length_c     9.55746
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       323.11886
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.00000 0.68091 0.18091 1.00000
  Dy2 Dy 0.00000 0.31909 0.81909 1.00000
  Dy3 Dy 0.00000 0.18091 0.31909 1.00000
  Dy4 Dy 0.00000 0.81909 0.68091 1.00000
  Ga1 Ga 0.00000 0.11558 0.61558 1.00000
  Ga2 Ga 0.00000 0.88442 0.38442 1.00000
  Ga3 Ga 0.00000 0.61558 0.88442 1.00000
  Ga4 Ga 0.00000 0.38442 0.11558 1.00000
  Ni1 Ni 0.50000 0.21515 0.05695 1.00000
  Ni2 Ni 0.50000 0.78485 0.94305 1.00000
  Ni3 Ni 0.50000 0.05695 0.78485 1.00000
  Ni4 Ni 0.50000 0.71515 0.44305 1.00000
  Ni5 Ni 0.50000 0.94305 0.21515 1.00000
  Ni6 Ni 0.50000 0.28485 0.55695 1.00000
  Ni7 Ni 0.50000 0.55695 0.71515 1.00000
  Ni8 Ni 0.50000 0.44305 0.28485 1.00000
  Ni9 Ni 0.50000 0.50000 0.00000 1.00000
  Ni10 Ni 0.50000 0.00000 0.50000 1.00000
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
  Sn2 Sn 0.00000 0.50000 0.50000 1.00000
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