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Tb2GaSn2Rh5

Alexandria ALEX

Alex-ID: agm005137358 · Space group: P4/mbm (#127)

Basic Information

Formula
Tb2GaSn2Rh5
Alex-ID
agm005137358
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
371.50
ų
Cell a
3.2683
Å
Cell b
10.6615
Å
Cell c
10.6615
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb2GaSn2Rh5
Tb
4.00 · 20.0%
Ga
2.00 · 10.0%
Sn
4.00 · 20.0%
Rh
10.00 · 50.0%

Energy & Stability

Energy above hull
0.2120
eV/atom
Formation energy
-0.5811
eV/atom
Corrected total energy
-125.7350
eV
Raw total energy
-125.7349
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.0995
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D5_49_spg127

Decomposition

Tb2Ga2SnRh5 TbSn2Rh3 TbSnRh2

Computed at

2022-07-14 20:28:20.699577

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005137358).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005137358
data_agm005137358
_cell_length_a     3.26832
_cell_length_b     10.66154
_cell_length_c     10.66154
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       371.50476
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.00000 0.66455 0.16455 1.00000
  Tb2 Tb 0.00000 0.33545 0.83545 1.00000
  Tb3 Tb 0.00000 0.16455 0.33545 1.00000
  Tb4 Tb 0.00000 0.83545 0.66455 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  Ga2 Ga 0.00000 0.50000 0.50000 1.00000
  Sn1 Sn 0.00000 0.13876 0.63876 1.00000
  Sn2 Sn 0.00000 0.86124 0.36124 1.00000
  Sn3 Sn 0.00000 0.63876 0.86124 1.00000
  Sn4 Sn 0.00000 0.36124 0.13876 1.00000
  Rh1 Rh 0.50000 0.19449 0.03220 1.00000
  Rh2 Rh 0.50000 0.80551 0.96780 1.00000
  Rh3 Rh 0.50000 0.03220 0.80551 1.00000
  Rh4 Rh 0.50000 0.69449 0.46780 1.00000
  Rh5 Rh 0.50000 0.96780 0.19449 1.00000
  Rh6 Rh 0.50000 0.30551 0.53220 1.00000
  Rh7 Rh 0.50000 0.53220 0.69449 1.00000
  Rh8 Rh 0.50000 0.46780 0.30551 1.00000
  Rh9 Rh 0.50000 0.50000 0.00000 1.00000
  Rh10 Rh 0.50000 0.00000 0.50000 1.00000
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