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Tb2Ga5Ni2Rh

Alexandria ALEX

Alex-ID: agm005140123 · Space group: P4/mbm (#127)

Basic Information

Formula
Tb2Ga5Ni2Rh
Alex-ID
agm005140123
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
337.37
ų
Cell a
4.0383
Å
Cell b
9.1402
Å
Cell c
9.1402
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb2Ga5Ni2Rh
Tb
4.00 · 20.0%
Ga
10.00 · 50.0%
Ni
4.00 · 20.0%
Rh
2.00 · 10.0%

Energy & Stability

Energy above hull
0.1439
eV/atom
Formation energy
-0.5340
eV/atom
Corrected total energy
-97.3415
eV
Raw total energy
-97.3415
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
13.3830
Total magnetisation
-0.0001
μB

Additional Information

Prototype ID

AB2C2D5_50_spg127

Decomposition

Tb2Ga5Ni3 Tb2Ga5Rh3

Computed at

2022-07-15 01:51:30.577938

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005140123).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005140123
data_agm005140123
_cell_length_a     4.03830
_cell_length_b     9.14021
_cell_length_c     9.14021
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       337.37356
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.00000 0.68403 0.18403 1.00000
  Tb2 Tb 0.00000 0.31597 0.81597 1.00000
  Tb3 Tb 0.00000 0.18403 0.31597 1.00000
  Tb4 Tb 0.00000 0.81597 0.68403 1.00000
  Ga1 Ga 0.50000 0.20323 0.05669 1.00000
  Ga2 Ga 0.50000 0.79677 0.94331 1.00000
  Ga3 Ga 0.50000 0.05669 0.79677 1.00000
  Ga4 Ga 0.50000 0.70323 0.44331 1.00000
  Ga5 Ga 0.50000 0.94331 0.20323 1.00000
  Ga6 Ga 0.50000 0.29677 0.55669 1.00000
  Ga7 Ga 0.50000 0.55669 0.70323 1.00000
  Ga8 Ga 0.50000 0.44331 0.29677 1.00000
  Ga9 Ga 0.50000 0.50000 0.00000 1.00000
  Ga10 Ga 0.50000 0.00000 0.50000 1.00000
  Ni1 Ni 0.00000 0.11020 0.61020 1.00000
  Ni2 Ni 0.00000 0.88980 0.38980 1.00000
  Ni3 Ni 0.00000 0.61020 0.88980 1.00000
  Ni4 Ni 0.00000 0.38980 0.11020 1.00000
  Rh1 Rh 0.00000 0.00000 0.00000 1.00000
  Rh2 Rh 0.00000 0.50000 0.50000 1.00000
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