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Ba2AcGaO5

Alexandria ALEX

Alex-ID: agm005145337 · 空间群: P4/mbm (#127)

基础信息

化学式
Ba2AcGaO5
Alex-ID
agm005145337
元素数
4
位点数
18
空间群
P4/mbm (#127)
晶系
tetragonal
体积
309.45
ų
晶胞参数 a
6.4381
Å
晶胞参数 b
6.9330
Å
晶胞参数 c
6.9330
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ba2AcGaO5
Ba
4.00 · 22.2%
Ac
2.00 · 11.1%
Ga
2.00 · 11.1%
O
10.00 · 55.6%

能量与稳定性

凸包上方能量
0.3428
eV/atom
形成能
-2.6977
eV/atom
校正后总能量
-120.1074
eV
原始总能量
-113.0845
eV

电子结构

间接带隙
1.3730
eV
直接带隙
1.4850
eV
费米能级态密度
-0.0003
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2D5_267_spg127

分解产物

Ba4Ga2O7 Ac2O3

计算时间

2023-01-17 11:36:44.795320

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005145337).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005145337
data_agm005145337
_cell_length_a     6.43808
_cell_length_b     6.93297
_cell_length_c     6.93297
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       309.45256
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.50000 0.66960 0.16960 1.00000
  Ba2 Ba 0.50000 0.16960 0.33040 1.00000
  Ba3 Ba 0.50000 0.83040 0.66960 1.00000
  Ba4 Ba 0.50000 0.33040 0.83040 1.00000
  Ac1 Ac 0.00000 0.50000 0.50000 1.00000
  Ac2 Ac 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.00000 0.00000 0.50000 1.00000
  Ga2 Ga 0.00000 0.50000 0.00000 1.00000
  O1 O 0.50000 0.50000 0.50000 1.00000
  O2 O 0.50000 0.00000 0.00000 1.00000
  O3 O 0.19865 0.14553 0.64553 1.00000
  O4 O 0.19865 0.85447 0.35447 1.00000
  O5 O 0.19865 0.35447 0.14553 1.00000
  O6 O 0.19865 0.64553 0.85447 1.00000
  O7 O 0.80135 0.14553 0.64553 1.00000
  O8 O 0.80135 0.64553 0.85447 1.00000
  O9 O 0.80135 0.85447 0.35447 1.00000
  O10 O 0.80135 0.35447 0.14553 1.00000
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