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UTaSi2Os5

Alexandria ALEX

Alex-ID: agm005148510 · Space group: P4/mmm (#123)

Basic Information

Formula
UTaSi2Os5
Alex-ID
agm005148510
Elements
4
Sites
9
Space group
P4/mmm (#123)
Crystal system
tetragonal
Volume
169.31
ų
Cell a
3.7920
Å
Cell b
3.7920
Å
Cell c
11.7741
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
UTaSi2Os5
U
1.00 · 11.1%
Ta
1.00 · 11.1%
Si
2.00 · 22.2%
Os
5.00 · 55.6%

Energy & Stability

Energy above hull
0.8061
eV/atom
Formation energy
0.4065
eV/atom
Corrected total energy
-86.4773
eV
Raw total energy
-86.4773
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
12.6523
Total magnetisation
1.0754
μB

Additional Information

Prototype ID

ABC2D5_212_spg123

Decomposition

Ta3Os4 TaOs7 TaSiOs U4Si6Os7

Computed at

2023-01-19 13:52:43.827674

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005148510).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005148510
data_agm005148510
_cell_length_a     3.79202
_cell_length_b     3.79202
_cell_length_c     11.77414
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       169.30544
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  U1 U 0.50000 0.50000 0.50000 1.00000
  Ta1 Ta 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.00000 0.00000 0.70098 1.00000
  Si2 Si 0.00000 0.00000 0.29902 1.00000
  Os1 Os 0.00000 0.00000 0.50000 1.00000
  Os2 Os 0.00000 0.50000 0.83288 1.00000
  Os3 Os 0.50000 0.00000 0.16712 1.00000
  Os4 Os 0.00000 0.50000 0.16712 1.00000
  Os5 Os 0.50000 0.00000 0.83288 1.00000
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