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GaSbPb2S5

Alexandria ALEX

Alex-ID: agm005158750 · Space group: Cmc2_1 (#36)

Basic Information

Formula
GaSbPb2S5
Alex-ID
agm005158750
Elements
4
Sites
18
Space group
Cmc2_1 (#36)
Crystal system
orthorhombic
Volume
436.25
ų
Cell a
3.9232
Å
Cell b
9.0962
Å
Cell c
12.5190
Å
α angle
90.00
°
β angle
90.00
°
γ angle
102.45
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
GaSbPb2S5
Ga
2.00 · 11.1%
Sb
2.00 · 11.1%
Pb
4.00 · 22.2%
S
10.00 · 55.6%

Energy & Stability

Energy above hull
0.0229
eV/atom
Formation energy
-0.8585
eV/atom
Corrected total energy
-85.8648
eV
Raw total energy
-79.2302
eV

Electronic Structure

Indirect band gap
0.9820
eV
Direct band gap
1.3860
eV
DOS at Fermi level
-0.0170
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D5_217_spg36

Decomposition

Sb8(PbS5)3 Ga2PbS4 PbS

Computed at

2023-01-19 13:52:57.771450

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005158750).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005158750
data_agm005158750
_cell_length_a     3.92321
_cell_length_b     9.09621
_cell_length_c     12.51904
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  102.45370
_cell_volume       436.24619
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.55221 0.10442 0.92881 1.00000
  Ga2 Ga 0.44779 0.89558 0.42881 1.00000
  Sb1 Sb 0.79479 0.58959 0.52917 1.00000
  Sb2 Sb 0.20521 0.41041 0.02917 1.00000
  Pb1 Pb 0.87568 0.75136 0.82421 1.00000
  Pb2 Pb 0.11981 0.23962 0.68001 1.00000
  Pb3 Pb 0.12432 0.24864 0.32421 1.00000
  Pb4 Pb 0.88019 0.76038 0.18001 1.00000
  S1 S 0.34919 0.69839 0.01117 1.00000
  S2 S 0.67690 0.35380 0.87017 1.00000
  S3 S 0.48846 0.97692 0.77260 1.00000
  S4 S 0.28759 0.57519 0.67723 1.00000
  S5 S 0.96704 0.93408 0.53058 1.00000
  S6 S 0.65081 0.30161 0.51117 1.00000
  S7 S 0.32310 0.64620 0.37017 1.00000
  S8 S 0.51154 0.02308 0.27260 1.00000
  S9 S 0.71241 0.42481 0.17723 1.00000
  S10 S 0.03296 0.06592 0.03058 1.00000
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