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GaBiPb2S5

Alexandria ALEX

Alex-ID: agm005158786 · 空间群: Cmc2_1 (#36)

基础信息

化学式
GaBiPb2S5
Alex-ID
agm005158786
元素数
4
位点数
18
空间群
Cmc2_1 (#36)
晶系
orthorhombic
体积
448.04
ų
晶胞参数 a
3.9510
Å
晶胞参数 b
9.1749
Å
晶胞参数 c
12.6567
Å
α 角
90.00
°
β 角
90.00
°
γ 角
102.43
°

组成

元素组成(原子分数)
组成信息
化学式
GaBiPb2S5
Ga
2.00 · 11.1%
Bi
2.00 · 11.1%
Pb
4.00 · 22.2%
S
10.00 · 55.6%

能量与稳定性

凸包上方能量
0.0173
eV/atom
形成能
-0.8919
eV/atom
校正后总能量
-85.9821
eV
原始总能量
-79.3475
eV

电子结构

间接带隙
1.3925
eV
直接带隙
1.6119
eV
费米能级态密度
-0.0004
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2D5_337_spg36

分解产物

Bi2S3 Ga2PbS4 PbS

计算时间

2023-01-19 13:53:43.498715

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005158786).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005158786
data_agm005158786
_cell_length_a     3.95096
_cell_length_b     9.17495
_cell_length_c     12.65665
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  102.43384
_cell_volume       448.04007
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.55042 0.10083 0.92491 1.00000
  Ga2 Ga 0.44958 0.89917 0.42491 1.00000
  Bi1 Bi 0.79779 0.59557 0.53046 1.00000
  Bi2 Bi 0.20221 0.40443 0.03046 1.00000
  Pb1 Pb 0.87612 0.75224 0.82664 1.00000
  Pb2 Pb 0.12102 0.24203 0.67543 1.00000
  Pb3 Pb 0.12388 0.24776 0.32664 1.00000
  Pb4 Pb 0.87898 0.75797 0.17543 1.00000
  S1 S 0.35248 0.70496 0.01354 1.00000
  S2 S 0.67426 0.34852 0.86982 1.00000
  S3 S 0.48614 0.97228 0.77185 1.00000
  S4 S 0.28789 0.57578 0.68432 1.00000
  S5 S 0.96676 0.93353 0.52702 1.00000
  S6 S 0.64752 0.29504 0.51354 1.00000
  S7 S 0.32574 0.65148 0.36982 1.00000
  S8 S 0.51386 0.02772 0.27185 1.00000
  S9 S 0.71211 0.42422 0.18432 1.00000
  S10 S 0.03324 0.06647 0.02702 1.00000
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