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HoInSi2Pt5

Alexandria ALEX

Alex-ID: agm005169099 · Space group: P4/mmm (#123)

Basic Information

Formula
HoInSi2Pt5
Alex-ID
agm005169099
Elements
4
Sites
9
Space group
P4/mmm (#123)
Crystal system
tetragonal
Volume
183.32
ų
Cell a
3.9769
Å
Cell b
3.9769
Å
Cell c
11.5905
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
HoInSi2Pt5
Ho
1.00 · 11.1%
In
1.00 · 11.1%
Si
2.00 · 22.2%
Pt
5.00 · 55.6%

Energy & Stability

Energy above hull
0.1546
eV/atom
Formation energy
-0.7095
eV/atom
Corrected total energy
-55.0199
eV
Raw total energy
-55.0199
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
2.7955
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D5_209_spg123

Decomposition

HoSi2Pt3 SiPt2 HoSiPt3 In2Pt

Computed at

2023-01-19 13:52:50.547566

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005169099).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005169099
data_agm005169099
_cell_length_a     3.97694
_cell_length_b     3.97694
_cell_length_c     11.59051
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       183.31600
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.00000 0.00000 0.00000 1.00000
  In1 In 0.00000 0.00000 0.50000 1.00000
  Si1 Si 0.50000 0.50000 0.29632 1.00000
  Si2 Si 0.50000 0.50000 0.70368 1.00000
  Pt1 Pt 0.00000 0.50000 0.18386 1.00000
  Pt2 Pt 0.50000 0.00000 0.18386 1.00000
  Pt3 Pt 0.00000 0.50000 0.81614 1.00000
  Pt4 Pt 0.50000 0.00000 0.81614 1.00000
  Pt5 Pt 0.50000 0.50000 0.50000 1.00000
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