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Dy3Si4

Alexandria ALEX

Alex-ID: agm005222352 · Space group: Cm (#8)

Basic Information

Formula
Dy3Si4
Alex-ID
agm005222352
Elements
2
Sites
28
Space group
Cm (#8)
Crystal system
monoclinic
Volume
584.08
ų
Cell a
3.8744
Å
Cell b
4.1482
Å
Cell c
36.4014
Å
α angle
86.73
°
β angle
90.13
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Dy3Si4
Dy
12.00 · 42.9%
Si
16.00 · 57.1%

Energy & Stability

Energy above hull
0.0498
eV/atom
Formation energy
-0.6982
eV/atom
Corrected total energy
-161.5617
eV
Raw total energy
-161.5617
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0139
eV
DOS at Fermi level
10.0576
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B4_152_spg8

Decomposition

Dy10Si17 DySi

Computed at

2024-10-08 22:12:44

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005222352).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005222352
data_agm005222352
_cell_length_a     3.87440
_cell_length_b     4.14819
_cell_length_c     36.40138
_cell_angle_alpha  86.73360
_cell_angle_beta   90.12587
_cell_angle_gamma  90.00000
_cell_volume       584.08217
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.26004 0.89917 0.20167 1.00000
  Dy2 Dy 0.25698 0.23387 0.53225 1.00000
  Dy3 Dy 0.24931 0.56846 0.86308 1.00000
  Dy4 Dy 0.75762 0.43114 0.13772 1.00000
  Dy5 Dy 0.75539 0.76595 0.46810 1.00000
  Dy6 Dy 0.74721 0.10078 0.79843 1.00000
  Dy7 Dy 0.25477 0.47636 0.04728 1.00000
  Dy8 Dy 0.25394 0.80876 0.38248 1.00000
  Dy9 Dy 0.24570 0.14361 0.71278 1.00000
  Dy10 Dy 0.76320 0.85554 0.28892 1.00000
  Dy11 Dy 0.75982 0.19030 0.61939 1.00000
  Dy12 Dy 0.75184 0.52330 0.95339 1.00000
  Si1 Si 0.26189 0.36973 0.26055 1.00000
  Si2 Si 0.25854 0.70453 0.59095 1.00000
  Si3 Si 0.25059 0.04032 0.91937 1.00000
  Si4 Si 0.75612 0.95938 0.08125 1.00000
  Si5 Si 0.75440 0.29646 0.40708 1.00000
  Si6 Si 0.74615 0.63131 0.73739 1.00000
  Si7 Si 0.25726 0.93938 0.12124 1.00000
  Si8 Si 0.25530 0.27540 0.44921 1.00000
  Si9 Si 0.24712 0.61034 0.77933 1.00000
  Si10 Si 0.76037 0.38998 0.22004 1.00000
  Si11 Si 0.75703 0.72506 0.54989 1.00000
  Si12 Si 0.74952 0.06053 0.87895 1.00000
  Si13 Si 0.27104 0.33762 0.32476 1.00000
  Si14 Si 0.27023 0.67243 0.65514 1.00000
  Si15 Si 0.25289 0.00846 0.98307 1.00000
  Si16 Si 0.75372 0.99126 0.01748 1.00000
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