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MgMn4(Si4O11)2

Alexandria ALEX

Alex-ID: agm005223073 · Space group: P-1 (#2)

Basic Information

Formula
MgMn4(Si4O11)2
Alex-ID
agm005223073
Elements
4
Sites
35
Space group
P-1 (#2)
Crystal system
triclinic
Volume
426.05
ų
Cell a
9.6427
Å
Cell b
7.7676
Å
Cell c
7.0386
Å
α angle
118.61
°
β angle
109.89
°
γ angle
90.34
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
MgMn4(Si4O11)2
Mg
1.00 · 2.9%
Mn
4.00 · 11.4%
Si
8.00 · 22.9%
O
22.00 · 62.9%

Energy & Stability

Energy above hull
0.0521
eV/atom
Formation energy
-2.9044
eV/atom
Corrected total energy
-292.3920
eV
Raw total energy
-270.2182
eV

Electronic Structure

Indirect band gap
1.4093
eV
Direct band gap
1.4186
eV
DOS at Fermi level
-0.0005
Total magnetisation
17.9998
μB

Additional Information

Prototype ID

AB4C8D22_1_spg2

Decomposition

Mn7SiO12 MgMnSiO4 Mn2SiO4 SiO2

Computed at

2024-10-13 12:06:52

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005223073).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005223073
data_agm005223073
_cell_length_a     9.64268
_cell_length_b     7.76763
_cell_length_c     7.03857
_cell_angle_alpha  118.60569
_cell_angle_beta   109.88593
_cell_angle_gamma  90.34176
_cell_volume       426.04717
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Mg1 Mg 0.49737 0.49484 0.99514 1.00000
  Mn1 Mn 0.28615 0.67725 0.72104 1.00000
  Mn2 Mn 0.26067 0.69889 0.26041 1.00000
  Mn3 Mn 0.73438 0.29117 0.73041 1.00000
  Mn4 Mn 0.70847 0.31274 0.26951 1.00000
  Si1 Si 0.03179 0.34667 0.21151 1.00000
  Si2 Si 0.21680 0.22590 0.92799 1.00000
  Si3 Si 0.23601 0.19243 0.50257 1.00000
  Si4 Si 0.57879 0.96112 0.78937 1.00000
  Si5 Si 0.41587 0.02894 0.20115 1.00000
  Si6 Si 0.75858 0.79755 0.48786 1.00000
  Si7 Si 0.77777 0.76407 0.06240 1.00000
  Si8 Si 0.96285 0.64337 0.77897 1.00000
  O1 O 0.14062 0.64337 0.84726 1.00000
  O2 O 0.08432 0.19456 0.30987 1.00000
  O3 O 0.14316 0.57189 0.39714 1.00000
  O4 O 0.05505 0.25902 0.96038 1.00000
  O5 O 0.18323 0.11006 0.64677 1.00000
  O6 O 0.32571 0.01707 0.36438 1.00000
  O7 O 0.35146 0.40417 0.66288 1.00000
  O8 O 0.42006 0.79860 0.62893 1.00000
  O9 O 0.43411 0.79763 0.04615 1.00000
  O10 O 0.28875 0.07112 0.01282 1.00000
  O11 O 0.32834 0.44126 0.07845 1.00000
  O12 O 0.66628 0.54866 0.91188 1.00000
  O13 O 0.70587 0.91893 0.97768 1.00000
  O14 O 0.56048 0.19240 0.94436 1.00000
  O15 O 0.57461 0.19143 0.36161 1.00000
  O16 O 0.64311 0.58582 0.32759 1.00000
  O17 O 0.66897 0.97298 0.62617 1.00000
  O18 O 0.81128 0.87989 0.34359 1.00000
  O19 O 0.93951 0.73100 0.03001 1.00000
  O20 O 0.85154 0.41810 0.59333 1.00000
  O21 O 0.91031 0.79542 0.68050 1.00000
  O22 O 0.85402 0.34670 0.14325 1.00000
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