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Si2N2O

Alexandria ALEX

Alex-ID: agm005223352 · 空间群: I4_1/amd (#141)

基础信息

化学式
Si2N2O
Alex-ID
agm005223352
元素数
3
位点数
40
空间群
I4_1/amd (#141)
晶系
tetragonal
体积
352.58
ų
晶胞参数 a
12.3104
Å
晶胞参数 b
12.3104
Å
晶胞参数 c
12.3104
Å
α 角
154.21
°
β 角
154.21
°
γ 角
36.79
°

组成

元素组成(原子分数)
组成信息
化学式
Si2N2O
Si
16.00 · 40.0%
N
16.00 · 40.0%
O
8.00 · 20.0%

能量与稳定性

凸包上方能量
0.1889
eV/atom
形成能
-1.7410
eV/atom
校正后总能量
-323.3115
eV
原始总能量
-317.6932
eV

电子结构

间接带隙
4.4303
eV
直接带隙
4.4788
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C2_135_spg141

分解产物

Si2N2O

计算时间

2024-10-06 05:19:10

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005223352).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005223352
data_agm005223352
_cell_length_a     12.31043
_cell_length_b     12.31043
_cell_length_c     12.31043
_cell_angle_alpha  154.21296
_cell_angle_beta   154.21296
_cell_angle_gamma  36.79014
_cell_volume       352.57858
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.70692 0.95726 0.25033 1.00000
  Si2 Si 0.54341 0.29308 0.25033 1.00000
  Si3 Si 0.04274 0.29308 0.74967 1.00000
  Si4 Si 0.04308 0.79341 0.75033 1.00000
  Si5 Si 0.04308 0.29274 0.24967 1.00000
  Si6 Si 0.70726 0.95692 0.75033 1.00000
  Si7 Si 0.20659 0.95692 0.24967 1.00000
  Si8 Si 0.70692 0.45659 0.74967 1.00000
  Si9 Si 0.91887 0.41887 0.50000 1.00000
  Si10 Si 0.16887 0.16887 0.00000 1.00000
  Si11 Si 0.83113 0.83113 0.00000 1.00000
  Si12 Si 0.58113 0.08113 0.50000 1.00000
  Si13 Si 0.37500 0.62500 0.25000 1.00000
  Si14 Si 0.37500 0.62500 0.75000 1.00000
  Si15 Si 0.87500 0.62500 0.25000 1.00000
  Si16 Si 0.37500 0.12500 0.75000 1.00000
  N1 N 0.12451 0.38740 0.26289 1.00000
  N2 N 0.13740 0.37451 0.76289 1.00000
  N3 N 0.61161 0.37451 0.23711 1.00000
  N4 N 0.62549 0.38839 0.76289 1.00000
  N5 N 0.12451 0.86161 0.73711 1.00000
  N6 N 0.13839 0.87549 0.26289 1.00000
  N7 N 0.61260 0.87549 0.73711 1.00000
  N8 N 0.62549 0.86260 0.23711 1.00000
  N9 N 0.78775 0.05092 0.26317 1.00000
  N10 N 0.47543 0.21225 0.26317 1.00000
  N11 N 0.94908 0.21225 0.73683 1.00000
  N12 N 0.96225 0.72543 0.76317 1.00000
  N13 N 0.96225 0.19908 0.23683 1.00000
  N14 N 0.80092 0.03775 0.76317 1.00000
  N15 N 0.27457 0.03775 0.23683 1.00000
  N16 N 0.78775 0.52457 0.73683 1.00000
  O1 O 0.45144 0.16657 0.71513 1.00000
  O2 O 0.91657 0.70144 0.21513 1.00000
  O3 O 0.48632 0.70144 0.78487 1.00000
  O4 O 0.29856 0.51368 0.21513 1.00000
  O5 O 0.45144 0.73632 0.28487 1.00000
  O6 O 0.26368 0.54856 0.71513 1.00000
  O7 O 0.83343 0.54856 0.28487 1.00000
  O8 O 0.29856 0.08343 0.78487 1.00000
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