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Y2Si2O7

Alexandria ALEX

Alex-ID: agm005227296 · 空间群: P2_1/c (#14)

基础信息

化学式
Y2Si2O7
Alex-ID
agm005227296
元素数
3
位点数
22
空间群
P2_1/c (#14)
晶系
monoclinic
体积
292.28
ų
晶胞参数 a
10.9405
Å
晶胞参数 b
4.7565
Å
晶胞参数 c
5.6485
Å
α 角
83.90
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Y2Si2O7
Y
4.00 · 18.2%
Si
4.00 · 18.2%
O
14.00 · 63.6%

能量与稳定性

凸包上方能量
0.0024
eV/atom
形成能
-3.6665
eV/atom
校正后总能量
-197.6223
eV
原始总能量
-187.7902
eV

电子结构

间接带隙
4.9610
eV
直接带隙
4.9767
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

A2B2C7_73_spg14

分解产物

Y2Si2O7

计算时间

2022-12-12 20:14:18.365703

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005227296).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005227296
data_agm005227296
_cell_length_a     10.94051
_cell_length_b     4.75651
_cell_length_c     5.64848
_cell_angle_alpha  83.90400
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       292.27710
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.65112 0.89078 0.40684 1.00000
  Y2 Y 0.15112 0.10922 0.09316 1.00000
  Y3 Y 0.34888 0.10922 0.59316 1.00000
  Y4 Y 0.84888 0.89078 0.90684 1.00000
  Si1 Si 0.88845 0.36106 0.35585 1.00000
  Si2 Si 0.38845 0.63894 0.14415 1.00000
  Si3 Si 0.11155 0.63894 0.64415 1.00000
  Si4 Si 0.61155 0.36106 0.85585 1.00000
  O1 O 0.94937 0.20513 0.13556 1.00000
  O2 O 0.44937 0.79487 0.36444 1.00000
  O3 O 0.05063 0.79487 0.86444 1.00000
  O4 O 0.55063 0.20513 0.63556 1.00000
  O5 O 0.68254 0.12538 0.03949 1.00000
  O6 O 0.18254 0.87462 0.46051 1.00000
  O7 O 0.31746 0.87462 0.96051 1.00000
  O8 O 0.81746 0.12538 0.53949 1.00000
  O9 O 0.00000 0.50000 0.50000 1.00000
  O10 O 0.50000 0.50000 0.00000 1.00000
  O11 O 0.70137 0.61958 0.74732 1.00000
  O12 O 0.20137 0.38042 0.75268 1.00000
  O13 O 0.29863 0.38042 0.25268 1.00000
  O14 O 0.79863 0.61958 0.24732 1.00000
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