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In2GaN3

Alexandria ALEX

Alex-ID: agm005228026 · Space group: Ccce (#68)

Basic Information

Formula
In2GaN3
Alex-ID
agm005228026
Elements
3
Sites
24
Space group
Ccce (#68)
Crystal system
orthorhombic
Volume
346.40
ų
Cell a
6.2650
Å
Cell b
6.2650
Å
Cell c
11.0758
Å
α angle
90.00
°
β angle
90.00
°
γ angle
127.17
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
In2GaN3
In
8.00 · 33.3%
Ga
4.00 · 16.7%
N
12.00 · 50.0%

Energy & Stability

Energy above hull
0.2893
eV/atom
Formation energy
0.0137
eV/atom
Corrected total energy
-129.3743
eV
Raw total energy
-129.3743
eV

Electronic Structure

Indirect band gap
0.1102
eV
Direct band gap
0.2220
eV
DOS at Fermi level
2.8682
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_688_spg68

Decomposition

GaN InN

Computed at

2023-05-09 20:14:12.233295

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005228026).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005228026
data_agm005228026
_cell_length_a     6.26495
_cell_length_b     6.26495
_cell_length_c     11.07584
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  127.17050
_cell_volume       346.40475
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.16455 0.32578 0.63801 1.00000
  In2 In 0.67422 0.83545 0.36199 1.00000
  In3 In 0.33545 0.17422 0.86199 1.00000
  In4 In 0.82578 0.66455 0.13801 1.00000
  In5 In 0.32578 0.16455 0.36199 1.00000
  In6 In 0.83545 0.67422 0.63801 1.00000
  In7 In 0.17422 0.33545 0.13801 1.00000
  In8 In 0.66455 0.82578 0.86199 1.00000
  Ga1 Ga 0.00000 0.50000 0.40179 1.00000
  Ga2 Ga 0.50000 0.00000 0.59821 1.00000
  Ga3 Ga 0.50000 0.00000 0.09821 1.00000
  Ga4 Ga 0.00000 0.50000 0.90179 1.00000
  N1 N 0.16796 0.83204 0.50000 1.00000
  N2 N 0.33204 0.66796 0.00000 1.00000
  N3 N 0.26592 0.48669 0.32556 1.00000
  N4 N 0.51331 0.73408 0.67444 1.00000
  N5 N 0.23408 0.01331 0.17444 1.00000
  N6 N 0.98669 0.76592 0.82556 1.00000
  N7 N 0.01331 0.23408 0.82556 1.00000
  N8 N 0.76592 0.98669 0.17444 1.00000
  N9 N 0.48669 0.26592 0.67444 1.00000
  N10 N 0.73408 0.51331 0.32556 1.00000
  N11 N 0.83204 0.16796 0.50000 1.00000
  N12 N 0.66796 0.33204 0.00000 1.00000
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