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Y2SiO5

Alexandria ALEX

Alex-ID: agm005230135 · 空间群: P2_1/c (#14)

基础信息

化学式
Y2SiO5
Alex-ID
agm005230135
元素数
3
位点数
32
空间群
P2_1/c (#14)
晶系
monoclinic
体积
411.95
ų
晶胞参数 a
6.9204
Å
晶胞参数 b
6.7606
Å
晶胞参数 c
9.1569
Å
α 角
74.06
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Y2SiO5
Y
8.00 · 25.0%
Si
4.00 · 12.5%
O
20.00 · 62.5%

能量与稳定性

凸包上方能量
0.0250
eV/atom
形成能
-3.7707
eV/atom
校正后总能量
-293.2217
eV
原始总能量
-279.1759
eV

电子结构

间接带隙
4.7512
eV
直接带隙
4.8781
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C5_10_spg14

分解产物

Y2SiO5

计算时间

2022-12-13 04:09:52.546917

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005230135).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005230135
data_agm005230135
_cell_length_a     6.92045
_cell_length_b     6.76059
_cell_length_c     9.15690
_cell_angle_alpha  74.06035
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       411.94550
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.63931 0.94219 0.87400 1.00000
  Y2 Y 0.36069 0.05781 0.12600 1.00000
  Y3 Y 0.13931 0.55781 0.12600 1.00000
  Y4 Y 0.86069 0.44219 0.87400 1.00000
  Y5 Y 0.12462 0.73206 0.47229 1.00000
  Y6 Y 0.62462 0.76794 0.52771 1.00000
  Y7 Y 0.37538 0.23206 0.47229 1.00000
  Y8 Y 0.87538 0.26794 0.52771 1.00000
  Si1 Si 0.41051 0.47445 0.79961 1.00000
  Si2 Si 0.91051 0.02555 0.20039 1.00000
  Si3 Si 0.58949 0.52555 0.20039 1.00000
  Si4 Si 0.08949 0.97445 0.79961 1.00000
  O1 O 0.88065 0.56066 0.61327 1.00000
  O2 O 0.13591 0.01056 0.61548 1.00000
  O3 O 0.57085 0.66206 0.79183 1.00000
  O4 O 0.71728 0.02010 0.10349 1.00000
  O5 O 0.11935 0.43934 0.38673 1.00000
  O6 O 0.04968 0.22480 0.12681 1.00000
  O7 O 0.38065 0.93934 0.38673 1.00000
  O8 O 0.42915 0.33794 0.20817 1.00000
  O9 O 0.21728 0.47990 0.89651 1.00000
  O10 O 0.28272 0.97990 0.89651 1.00000
  O11 O 0.54968 0.27520 0.87319 1.00000
  O12 O 0.92915 0.16206 0.79183 1.00000
  O13 O 0.61935 0.06066 0.61327 1.00000
  O14 O 0.95032 0.77520 0.87319 1.00000
  O15 O 0.07085 0.83794 0.20817 1.00000
  O16 O 0.36409 0.51056 0.61548 1.00000
  O17 O 0.63591 0.48944 0.38452 1.00000
  O18 O 0.78272 0.52010 0.10349 1.00000
  O19 O 0.86409 0.98944 0.38452 1.00000
  O20 O 0.45032 0.72480 0.12681 1.00000
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