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Y2SiO5

Alexandria ALEX

Alex-ID: agm005231128 · 空间群: P2_1/c (#14)

基础信息

化学式
Y2SiO5
Alex-ID
agm005231128
元素数
3
位点数
32
空间群
P2_1/c (#14)
晶系
monoclinic
体积
429.09
ų
晶胞参数 a
6.9288
Å
晶胞参数 b
6.8396
Å
晶胞参数 c
10.7262
Å
α 角
90.00
°
β 角
122.42
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Y2SiO5
Y
8.00 · 25.0%
Si
4.00 · 12.5%
O
20.00 · 62.5%

能量与稳定性

凸包上方能量
0.1013
eV/atom
形成能
-3.6943
eV/atom
校正后总能量
-290.7775
eV
原始总能量
-276.7317
eV

电子结构

间接带隙
4.1510
eV
直接带隙
4.1594
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C5_743_spg14

分解产物

Y2SiO5

计算时间

2022-12-13 05:18:14.089792

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005231128).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005231128
data_agm005231128
_cell_length_a     6.92879
_cell_length_b     6.83960
_cell_length_c     10.72618
_cell_angle_alpha  90.00000
_cell_angle_beta   122.41903
_cell_angle_gamma  90.00000
_cell_volume       429.09410
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.37081 0.23225 0.49640 1.00000
  Y2 Y 0.12919 0.73225 0.50360 1.00000
  Y3 Y 0.62919 0.76775 0.50360 1.00000
  Y4 Y 0.87081 0.26775 0.49640 1.00000
  Y5 Y 0.21922 0.55205 0.84239 1.00000
  Y6 Y 0.28078 0.05205 0.15761 1.00000
  Y7 Y 0.78078 0.44795 0.15761 1.00000
  Y8 Y 0.71922 0.94795 0.84239 1.00000
  Si1 Si 0.66600 0.47890 0.78432 1.00000
  Si2 Si 0.83400 0.97890 0.21568 1.00000
  Si3 Si 0.33400 0.52110 0.21568 1.00000
  Si4 Si 0.16600 0.02110 0.78432 1.00000
  O1 O 0.46229 0.92506 0.60251 1.00000
  O2 O 0.03771 0.42506 0.39749 1.00000
  O3 O 0.53771 0.07494 0.39749 1.00000
  O4 O 0.96229 0.57494 0.60251 1.00000
  O5 O 0.10096 0.00375 0.91056 1.00000
  O6 O 0.39904 0.50375 0.08944 1.00000
  O7 O 0.89904 0.99625 0.08944 1.00000
  O8 O 0.60096 0.49625 0.91056 1.00000
  O9 O 0.20718 0.24669 0.75178 1.00000
  O10 O 0.29282 0.74669 0.24822 1.00000
  O11 O 0.79282 0.75331 0.24822 1.00000
  O12 O 0.70718 0.25331 0.75178 1.00000
  O13 O 0.45226 0.54079 0.61585 1.00000
  O14 O 0.04774 0.04079 0.38415 1.00000
  O15 O 0.54774 0.45921 0.38415 1.00000
  O16 O 0.95226 0.95921 0.61585 1.00000
  O17 O 0.62960 0.14018 0.17119 1.00000
  O18 O 0.87040 0.64018 0.82881 1.00000
  O19 O 0.37040 0.85982 0.82881 1.00000
  O20 O 0.12960 0.35982 0.17119 1.00000
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