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Ga2Te3

Alexandria ALEX

Alex-ID: agm005234429 · 空间群: Imm2 (#44)

基础信息

化学式
Ga2Te3
Alex-ID
agm005234429
元素数
2
位点数
5
空间群
Imm2 (#44)
晶系
orthorhombic
体积
165.04
ų
晶胞参数 a
4.2239
Å
晶胞参数 b
6.1360
Å
晶胞参数 c
7.3771
Å
α 角
114.57
°
β 角
106.64
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ga2Te3
Ga
2.00 · 40.0%
Te
3.00 · 60.0%

能量与稳定性

凸包上方能量
0.0117
eV/atom
形成能
-0.3091
eV/atom
校正后总能量
-17.0290
eV
原始总能量
-17.0290
eV

电子结构

间接带隙
0.1695
eV
直接带隙
0.2621
eV
费米能级态密度
0.2277
总磁矩
0.0000
μB

其他信息

原型 ID

A2B3_215_spg44

分解产物

Ga2Te3

计算时间

2023-04-20 18:59:07.260285

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005234429).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005234429
data_agm005234429
_cell_length_a     4.22389
_cell_length_b     6.13603
_cell_length_c     7.37712
_cell_angle_alpha  114.57490
_cell_angle_beta   106.63557
_cell_angle_gamma  90.00000
_cell_volume       165.03985
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.99498 0.00485 0.98995 1.00000
  Ga2 Ga 0.67169 0.68156 0.34338 1.00000
  Te1 Te 0.48977 0.72150 0.97953 1.00000
  Te2 Te 0.17690 0.40863 0.35380 1.00000
  Te3 Te 0.83333 0.10014 0.66667 1.00000
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