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HEAS Data Platform · Materials Science Database

Mg4Si3

Alexandria ALEX

Alex-ID: agm005239136 · Space group: P1 (#1)

Basic Information

Formula
Mg4Si3
Alex-ID
agm005239136
Elements
2
Sites
28
Space group
P1 (#1)
Crystal system
triclinic
Volume
550.84
ų
Cell a
6.4647
Å
Cell b
7.7545
Å
Cell c
11.6856
Å
α angle
93.38
°
β angle
97.05
°
γ angle
107.75
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Mg4Si3
Mg
16.00 · 57.1%
Si
12.00 · 42.9%

Energy & Stability

Energy above hull
0.1744
eV/atom
Formation energy
0.0398
eV/atom
Corrected total energy
-89.4763
eV
Raw total energy
-89.4763
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0393
eV
DOS at Fermi level
7.9205
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B4_1747_spg1

Decomposition

Mg2Si Si

Computed at

2023-05-11 18:01:54.562711

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005239136).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005239136
data_agm005239136
_cell_length_a     6.46470
_cell_length_b     7.75455
_cell_length_c     11.68557
_cell_angle_alpha  93.37926
_cell_angle_beta   97.04610
_cell_angle_gamma  107.74530
_cell_volume       550.83816
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Mg1 Mg 0.77588 0.84827 0.87039 1.00000
  Mg2 Mg 0.62856 0.40979 0.91992 1.00000
  Mg3 Mg 0.16378 0.98135 0.41183 1.00000
  Mg4 Mg 0.05903 0.51197 0.20833 1.00000
  Mg5 Mg 0.26998 0.93470 0.86186 1.00000
  Mg6 Mg 0.06514 0.31006 0.91351 1.00000
  Mg7 Mg 0.53253 0.79676 0.41064 1.00000
  Mg8 Mg 0.46536 0.40040 0.43998 1.00000
  Mg9 Mg 0.35673 0.83229 0.63468 1.00000
  Mg10 Mg 0.33477 0.25392 0.67338 1.00000
  Mg11 Mg 0.86104 0.86110 0.16208 1.00000
  Mg12 Mg 0.73212 0.19418 0.28952 1.00000
  Mg13 Mg 0.93117 0.47085 0.67987 1.00000
  Mg14 Mg 0.89810 0.93272 0.63460 1.00000
  Mg15 Mg 0.51852 0.49731 0.17322 1.00000
  Mg16 Mg 0.33879 0.89180 0.17998 1.00000
  Si1 Si 0.62716 0.13283 0.54442 1.00000
  Si2 Si 0.11857 0.57419 0.46249 1.00000
  Si3 Si 0.33986 0.18023 0.04892 1.00000
  Si4 Si 0.03618 0.66487 0.00208 1.00000
  Si5 Si 0.34693 0.58360 0.79541 1.00000
  Si6 Si 0.67378 0.13623 0.76663 1.00000
  Si7 Si 0.82115 0.63774 0.35217 1.00000
  Si8 Si 0.19708 0.19982 0.23192 1.00000
  Si9 Si 0.60523 0.60688 0.66048 1.00000
  Si10 Si 0.00111 0.25057 0.49687 1.00000
  Si11 Si 0.43789 0.70001 0.00019 1.00000
  Si12 Si 0.64450 0.06242 0.03876 1.00000
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