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HEAS Data Platform · Materials Science Database

Mg3Si4

Alexandria ALEX

Alex-ID: agm005244347 · Space group: P1 (#1)

Basic Information

Formula
Mg3Si4
Alex-ID
agm005244347
Elements
2
Sites
28
Space group
P1 (#1)
Crystal system
triclinic
Volume
530.89
ų
Cell a
7.0386
Å
Cell b
8.2828
Å
Cell c
10.5829
Å
α angle
78.74
°
β angle
73.87
°
γ angle
64.03
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Mg3Si4
Mg
12.00 · 42.9%
Si
16.00 · 57.1%

Energy & Stability

Energy above hull
0.2047
eV/atom
Formation energy
0.1038
eV/atom
Corrected total energy
-102.9969
eV
Raw total energy
-102.9969
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.1824
eV
DOS at Fermi level
6.1451
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B4_1738_spg1

Decomposition

Mg2Si Si

Computed at

2023-05-11 17:02:28.384741

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005244347).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005244347
data_agm005244347
_cell_length_a     7.03864
_cell_length_b     8.28280
_cell_length_c     10.58289
_cell_angle_alpha  78.74299
_cell_angle_beta   73.87109
_cell_angle_gamma  64.02605
_cell_volume       530.89171
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Mg1 Mg 0.47098 0.50576 0.46681 1.00000
  Mg2 Mg 0.93013 0.55265 0.36486 1.00000
  Mg3 Mg 0.80476 0.18396 0.92448 1.00000
  Mg4 Mg 0.30403 0.84747 0.09425 1.00000
  Mg5 Mg 0.71889 0.62871 0.81802 1.00000
  Mg6 Mg 0.25263 0.55362 0.79006 1.00000
  Mg7 Mg 0.35131 0.12963 0.34436 1.00000
  Mg8 Mg 0.05741 0.89027 0.37903 1.00000
  Mg9 Mg 0.55114 0.80873 0.56485 1.00000
  Mg10 Mg 0.97589 0.93936 0.67987 1.00000
  Mg11 Mg 0.79277 0.56581 0.09858 1.00000
  Mg12 Mg 0.30096 0.25410 0.03516 1.00000
  Si1 Si 0.49082 0.48204 0.02343 1.00000
  Si2 Si 0.82759 0.90576 0.19617 1.00000
  Si3 Si 0.90612 0.22320 0.48959 1.00000
  Si4 Si 0.58565 0.13461 0.51567 1.00000
  Si5 Si 0.53552 0.16869 0.74464 1.00000
  Si6 Si 0.15697 0.23386 0.79554 1.00000
  Si7 Si 0.54217 0.78444 0.29515 1.00000
  Si8 Si 0.34107 0.48279 0.25251 1.00000
  Si9 Si 0.68700 0.39589 0.68240 1.00000
  Si10 Si 0.17756 0.32085 0.56576 1.00000
  Si11 Si 0.98155 0.80958 0.96975 1.00000
  Si12 Si 0.62191 0.94283 0.92523 1.00000
  Si13 Si 0.01054 0.64354 0.58463 1.00000
  Si14 Si 0.26624 0.90450 0.82566 1.00000
  Si15 Si 0.98471 0.25417 0.24272 1.00000
  Si16 Si 0.68412 0.23617 0.19699 1.00000
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