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SiO2

Alexandria ALEX

Alex-ID: agm005245668 · 空间群: P4/nbm (#125)

基础信息

化学式
SiO2
Alex-ID
agm005245668
元素数
2
位点数
24
空间群
P4/nbm (#125)
晶系
tetragonal
体积
403.82
ų
晶胞参数 a
9.7266
Å
晶胞参数 b
9.7266
Å
晶胞参数 c
4.2684
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
SiO2
Si
8.00 · 33.3%
O
16.00 · 66.7%

能量与稳定性

凸包上方能量
1.2467
eV/atom
形成能
-2.0231
eV/atom
校正后总能量
-171.2704
eV
原始总能量
-160.0337
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
4.2076
总磁矩
1.3805
μB

其他信息

原型 ID

AB2_6117_spg125

分解产物

SiO2

计算时间

2023-05-09 22:30:21.376744

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005245668).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005245668
data_agm005245668
_cell_length_a     9.72663
_cell_length_b     9.72663
_cell_length_c     4.26840
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       403.82234
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.64898 0.85102 0.16740 1.00000
  Si2 Si 0.85102 0.64898 0.83260 1.00000
  Si3 Si 0.64898 0.14898 0.83260 1.00000
  Si4 Si 0.35102 0.85102 0.83260 1.00000
  Si5 Si 0.35102 0.14898 0.16740 1.00000
  Si6 Si 0.14898 0.35102 0.83260 1.00000
  Si7 Si 0.14898 0.64898 0.16740 1.00000
  Si8 Si 0.85102 0.35102 0.16740 1.00000
  O1 O 0.81173 0.50000 0.00000 1.00000
  O2 O 0.25000 0.25000 0.00000 1.00000
  O3 O 0.00000 0.68827 0.00000 1.00000
  O4 O 0.50000 0.81173 0.00000 1.00000
  O5 O 0.75000 0.75000 0.50000 1.00000
  O6 O 0.50000 0.18827 0.00000 1.00000
  O7 O 0.75000 0.25000 0.50000 1.00000
  O8 O 0.18827 0.50000 0.00000 1.00000
  O9 O 0.25000 0.25000 0.50000 1.00000
  O10 O 0.31173 0.00000 0.00000 1.00000
  O11 O 0.25000 0.75000 0.50000 1.00000
  O12 O 0.00000 0.31173 0.00000 1.00000
  O13 O 0.75000 0.25000 0.00000 1.00000
  O14 O 0.68827 0.00000 0.00000 1.00000
  O15 O 0.75000 0.75000 0.00000 1.00000
  O16 O 0.25000 0.75000 0.00000 1.00000
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