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Ho2SiO5

Alexandria ALEX

Alex-ID: agm005247772 · 空间群: P2_1/c (#14)

基础信息

化学式
Ho2SiO5
Alex-ID
agm005247772
元素数
3
位点数
32
空间群
P2_1/c (#14)
晶系
monoclinic
体积
405.44
ų
晶胞参数 a
6.8389
Å
晶胞参数 b
6.7242
Å
晶胞参数 c
9.1299
Å
α 角
74.94
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ho2SiO5
Ho
8.00 · 25.0%
Si
4.00 · 12.5%
O
20.00 · 62.5%

能量与稳定性

凸包上方能量
0.0072
eV/atom
形成能
-3.8058
eV/atom
校正后总能量
-279.2687
eV
原始总能量
-265.2229
eV

电子结构

间接带隙
4.7424
eV
直接带隙
4.8755
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C5_10_spg14

分解产物

Ho6Si4O17 Ho2O3

计算时间

2022-12-13 03:59:33.495579

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005247772).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005247772
data_agm005247772
_cell_length_a     6.83893
_cell_length_b     6.72421
_cell_length_c     9.12987
_cell_angle_alpha  74.94494
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       405.43952
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.12327 0.73155 0.47041 1.00000
  Ho2 Ho 0.62327 0.76845 0.52959 1.00000
  Ho3 Ho 0.87673 0.26845 0.52959 1.00000
  Ho4 Ho 0.37673 0.23155 0.47041 1.00000
  Ho5 Ho 0.63925 0.95342 0.86893 1.00000
  Ho6 Ho 0.13925 0.54658 0.13107 1.00000
  Ho7 Ho 0.36075 0.04658 0.13107 1.00000
  Ho8 Ho 0.86075 0.45342 0.86893 1.00000
  Si1 Si 0.09139 0.97927 0.79913 1.00000
  Si2 Si 0.59139 0.52073 0.20087 1.00000
  Si3 Si 0.90861 0.02073 0.20087 1.00000
  Si4 Si 0.40861 0.47927 0.79913 1.00000
  O1 O 0.88036 0.56327 0.61229 1.00000
  O2 O 0.38036 0.93673 0.38771 1.00000
  O3 O 0.11964 0.43673 0.38771 1.00000
  O4 O 0.61964 0.06327 0.61229 1.00000
  O5 O 0.28722 0.98396 0.89648 1.00000
  O6 O 0.78722 0.51604 0.10352 1.00000
  O7 O 0.71278 0.01604 0.10352 1.00000
  O8 O 0.21278 0.48396 0.89648 1.00000
  O9 O 0.13805 0.01396 0.61465 1.00000
  O10 O 0.63805 0.48604 0.38535 1.00000
  O11 O 0.86195 0.98604 0.38535 1.00000
  O12 O 0.36195 0.51396 0.61465 1.00000
  O13 O 0.56916 0.66981 0.79075 1.00000
  O14 O 0.06916 0.83019 0.20925 1.00000
  O15 O 0.43084 0.33019 0.20925 1.00000
  O16 O 0.93084 0.16981 0.79075 1.00000
  O17 O 0.55401 0.28378 0.86954 1.00000
  O18 O 0.05401 0.21622 0.13046 1.00000
  O19 O 0.44599 0.71622 0.13046 1.00000
  O20 O 0.94599 0.78378 0.86954 1.00000
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