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Ga3Ni5Sn2

Alexandria ALEX

Alex-ID: agm005252102 · 空间群: Cmcm (#63)

Alexandria Database API

基础信息

化学式
Ga3Ni5Sn2
Alex-ID
agm005252102
元素数
3
位点数
20
空间群
Cmcm (#63)
晶系
orthorhombic
体积
292.66
ų
晶胞参数 a
6.5025
Å
晶胞参数 b
6.5025
Å
晶胞参数 c
11.5066
Å
α 角
90.00
°
β 角
90.00
°
γ 角
143.02
°

组成

元素组成（原子分数）
组成信息
化学式
Ga3Ni5Sn2
Ga
6.00 · 30.0%
Ni
10.00 · 50.0%
Sn
4.00 · 20.0%

能量与稳定性

凸包上方能量
0.0220
eV/atom
形成能
-0.3226
eV/atom
校正后总能量
-98.4783
eV
原始总能量
-98.4783
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
9.7807
总磁矩
-0.0001
μB

其他信息

原型 ID

A2B3C5_47_spg63

分解产物

Ga3Ni2 Ni6Sn5 GaNi

计算时间

2023-05-08 06:02:51.029426

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005252102).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm005252102
data_agm005252102
_cell_length_a     6.50253
_cell_length_b     6.50253
_cell_length_c     11.50657
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  143.02018
_cell_volume       292.66448
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.16878 0.83122 0.47398 1.00000
  Ga2 Ga 0.83122 0.16878 0.52602 1.00000
  Ga3 Ga 0.16878 0.83122 0.02602 1.00000
  Ga4 Ga 0.83122 0.16878 0.97398 1.00000
  Ga5 Ga 0.50000 0.50000 0.50000 1.00000
  Ga6 Ga 0.50000 0.50000 0.00000 1.00000
  Ni1 Ni 0.34186 0.65814 0.37730 1.00000
  Ni2 Ni 0.65814 0.34186 0.62270 1.00000
  Ni3 Ni 0.34186 0.65814 0.12270 1.00000
  Ni4 Ni 0.65814 0.34186 0.87730 1.00000
  Ni5 Ni 0.98073 0.01927 0.38043 1.00000
  Ni6 Ni 0.01927 0.98073 0.61957 1.00000
  Ni7 Ni 0.98073 0.01927 0.11957 1.00000
  Ni8 Ni 0.01927 0.98073 0.88043 1.00000
  Ni9 Ni 0.16212 0.83788 0.25000 1.00000
  Ni10 Ni 0.83788 0.16212 0.75000 1.00000
  Sn1 Sn 0.79355 0.20645 0.25000 1.00000
  Sn2 Sn 0.20645 0.79355 0.75000 1.00000
  Sn3 Sn 0.53373 0.46627 0.25000 1.00000
  Sn4 Sn 0.46627 0.53373 0.75000 1.00000
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