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GaC2NCl4

Alexandria ALEX

Alex-ID: agm005255049 · Space group: Pnma (#62)

Basic Information

Formula
GaC2NCl4
Alex-ID
agm005255049
Elements
4
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
1,012.13
ų
Cell a
7.4712
Å
Cell b
10.2587
Å
Cell c
13.2054
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
GaC2NCl4
Ga
4.00 · 12.5%
C
8.00 · 25.0%
N
4.00 · 12.5%
Cl
16.00 · 50.0%

Energy & Stability

Energy above hull
0.6928
eV/atom
Formation energy
-0.2122
eV/atom
Corrected total energy
-144.5689
eV
Raw total energy
-144.5689
eV

Electronic Structure

Indirect band gap
2.1954
eV
Direct band gap
2.1954
eV
DOS at Fermi level
0.0000
Total magnetisation
0.2084
μB

Additional Information

Prototype ID

ABC2D4_1528_spg62

Decomposition

CCl4 N2Cl GaCl3 C

Computed at

2024-11-11 23:34:00

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005255049).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005255049
data_agm005255049
_cell_length_a     7.47121
_cell_length_b     10.25868
_cell_length_c     13.20544
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       1012.12776
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.25000 0.26549 0.05036 1.00000
  Ga2 Ga 0.25000 0.23451 0.55036 1.00000
  Ga3 Ga 0.75000 0.73451 0.94964 1.00000
  Ga4 Ga 0.75000 0.76549 0.44964 1.00000
  C1 C 0.25000 0.83128 0.08068 1.00000
  C2 C 0.25000 0.66872 0.58068 1.00000
  C3 C 0.75000 0.16872 0.91932 1.00000
  C4 C 0.75000 0.33128 0.41932 1.00000
  C5 C 0.25000 0.02988 0.19528 1.00000
  C6 C 0.25000 0.47012 0.69528 1.00000
  C7 C 0.75000 0.97012 0.80472 1.00000
  C8 C 0.75000 0.52988 0.30472 1.00000
  N1 N 0.25000 0.93371 0.12428 1.00000
  N2 N 0.25000 0.56629 0.62428 1.00000
  N3 N 0.75000 0.06629 0.87572 1.00000
  N4 N 0.75000 0.43371 0.37572 1.00000
  Cl1 Cl 0.25000 0.18986 0.90018 1.00000
  Cl2 Cl 0.25000 0.31014 0.40018 1.00000
  Cl3 Cl 0.75000 0.81014 0.09982 1.00000
  Cl4 Cl 0.75000 0.68986 0.59982 1.00000
  Cl5 Cl 0.04552 0.14910 0.14912 1.00000
  Cl6 Cl 0.45448 0.35090 0.64912 1.00000
  Cl7 Cl 0.54552 0.85090 0.85088 1.00000
  Cl8 Cl 0.95448 0.64910 0.35088 1.00000
  Cl9 Cl 0.95448 0.85090 0.85088 1.00000
  Cl10 Cl 0.54552 0.64910 0.35088 1.00000
  Cl11 Cl 0.45448 0.14910 0.14912 1.00000
  Cl12 Cl 0.04552 0.35090 0.64912 1.00000
  Cl13 Cl 0.25000 0.46670 0.08668 1.00000
  Cl14 Cl 0.25000 0.03330 0.58668 1.00000
  Cl15 Cl 0.75000 0.53330 0.91332 1.00000
  Cl16 Cl 0.75000 0.96670 0.41332 1.00000
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