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Hf20Si12B

Alexandria ALEX

Alex-ID: agm005256545 · Space group: P2/m (#10)

Basic Information

Formula
Hf20Si12B
Alex-ID
agm005256545
Elements
3
Sites
33
Space group
P2/m (#10)
Crystal system
monoclinic
Volume
598.35
ų
Cell a
5.5426
Å
Cell b
7.9027
Å
Cell c
13.6606
Å
α angle
90.00
°
β angle
90.00
°
γ angle
89.95
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Hf20Si12B
Hf
20.00 · 60.6%
Si
12.00 · 36.4%
B
1.00 · 3.0%

Energy & Stability

Energy above hull
0.0364
eV/atom
Formation energy
-0.7600
eV/atom
Corrected total energy
-295.9027
eV
Raw total energy
-295.9027
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
19.2254
Total magnetisation
0.0001
μB

Additional Information

Prototype ID

AB12C20_2_spg10

Decomposition

Hf3Si2 Hf2Si HfB2

Computed at

2024-10-03 22:37:55

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005256545).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005256545
data_agm005256545
_cell_length_a     5.54255
_cell_length_b     7.90272
_cell_length_c     13.66055
_cell_angle_alpha  89.99999
_cell_angle_beta   90.00000
_cell_angle_gamma  89.95126
_cell_volume       598.34933
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Hf1 Hf 0.50000 1.00000 0.33323 1.00000
  Hf2 Hf 0.50000 0.49999 0.83308 1.00000
  Hf3 Hf 0.50000 0.49999 0.16692 1.00000
  Hf4 Hf 0.50000 1.00000 0.66677 1.00000
  Hf5 Hf 0.00000 0.50001 0.16715 1.00000
  Hf6 Hf 1.00000 0.00000 0.66618 1.00000
  Hf7 Hf 1.00000 0.00000 0.33382 1.00000
  Hf8 Hf 0.00000 0.50001 0.83285 1.00000
  Hf9 Hf 0.75387 0.24667 1.00000 1.00000
  Hf10 Hf 0.75053 0.75332 0.50000 1.00000
  Hf11 Hf 0.74877 0.37568 0.37528 1.00000
  Hf12 Hf 0.75487 0.87614 0.87639 1.00000
  Hf13 Hf 0.75487 0.87614 0.12361 1.00000
  Hf14 Hf 0.74877 0.37568 0.62472 1.00000
  Hf15 Hf 0.24613 0.75333 0.00000 1.00000
  Hf16 Hf 0.24946 0.24669 0.50000 1.00000
  Hf17 Hf 0.24513 0.12387 0.12361 1.00000
  Hf18 Hf 0.25123 0.62432 0.62472 1.00000
  Hf19 Hf 0.25123 0.62432 0.37528 1.00000
  Hf20 Hf 0.24513 0.12387 0.87639 1.00000
  Si1 Si 0.75324 0.60332 1.00000 1.00000
  Si2 Si 0.74799 0.11008 0.50000 1.00000
  Si3 Si 0.75213 0.19773 0.19796 1.00000
  Si4 Si 0.75101 0.69598 0.69565 1.00000
  Si5 Si 0.75101 0.69598 0.30435 1.00000
  Si6 Si 0.75213 0.19773 0.80204 1.00000
  Si7 Si 0.24675 0.39669 0.00000 1.00000
  Si8 Si 0.25200 0.88992 0.50000 1.00000
  Si9 Si 0.24900 0.30402 0.30435 1.00000
  Si10 Si 0.24787 0.80227 0.80204 1.00000
  Si11 Si 0.24787 0.80227 0.19796 1.00000
  Si12 Si 0.24900 0.30402 0.69565 1.00000
  B1 B 1.00000 0.00000 0.00000 1.00000
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