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Al2Si2H4O9

Alexandria ALEX

Alex-ID: agm005258595 · Space group: Cc (#9)

Basic Information

Formula
Al2Si2H4O9
Alex-ID
agm005258595
Elements
4
Sites
34
Space group
Cc (#9)
Crystal system
monoclinic
Volume
467.69
ų
Cell a
5.3206
Å
Cell b
5.3206
Å
Cell c
22.7954
Å
α angle
60.81
°
β angle
119.19
°
γ angle
118.28
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Al2Si2H4O9
Al
4.00 · 11.8%
Si
4.00 · 11.8%
H
8.00 · 23.5%
O
18.00 · 52.9%

Energy & Stability

Energy above hull
0.3703
eV/atom
Formation energy
-2.2916
eV/atom
Corrected total energy
-229.7537
eV
Raw total energy
-217.1125
eV

Electronic Structure

Indirect band gap
4.1135
eV
Direct band gap
4.1811
eV
DOS at Fermi level
0.0000
Total magnetisation
0.1160
μB

Additional Information

Prototype ID

A2B2C4D9_24_spg9

Decomposition

AlHO2 SiO2 H2O

Computed at

2024-10-19 02:19:21

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005258595).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005258595
data_agm005258595
_cell_length_a     5.32056
_cell_length_b     5.32056
_cell_length_c     22.79541
_cell_angle_alpha  60.81426
_cell_angle_beta   119.18574
_cell_angle_gamma  118.27648
_cell_volume       467.69476
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Al1 Al 0.75473 0.46852 0.70847 1.00000
  Al2 Al 0.53148 0.24527 0.20847 1.00000
  Al3 Al 0.11321 0.17263 0.70558 1.00000
  Al4 Al 0.82737 0.88679 0.20558 1.00000
  Si1 Si 0.80993 0.39498 0.52503 1.00000
  Si2 Si 0.60502 0.19007 0.02503 1.00000
  Si3 Si 0.47262 0.75338 0.52310 1.00000
  Si4 Si 0.24662 0.52738 0.02310 1.00000
  H1 H 0.74492 0.92691 0.61309 1.00000
  H2 H 0.07309 0.25508 0.11309 1.00000
  H3 H 0.73516 0.12481 0.88610 1.00000
  H4 H 0.87519 0.26484 0.38610 1.00000
  H5 H 0.76473 0.97865 0.89909 1.00000
  H6 H 0.02135 0.23527 0.39909 1.00000
  H7 H 0.62069 0.83762 0.77035 1.00000
  H8 H 0.16238 0.37931 0.27035 1.00000
  O1 O 0.58931 0.12468 0.48903 1.00000
  O2 O 0.87532 0.41069 0.98903 1.00000
  O3 O 0.10535 0.60824 0.49886 1.00000
  O4 O 0.39176 0.89465 0.99886 1.00000
  O5 O 0.61300 0.60549 0.50307 1.00000
  O6 O 0.39451 0.38700 0.00307 1.00000
  O7 O 0.91244 0.21186 0.61085 1.00000
  O8 O 0.78814 0.08756 0.11085 1.00000
  O9 O 0.61134 0.69430 0.61077 1.00000
  O10 O 0.30570 0.38866 0.11077 1.00000
  O11 O 0.77457 0.72728 0.79496 1.00000
  O12 O 0.27272 0.22543 0.29496 1.00000
  O13 O 0.85124 0.78974 0.73433 1.00000
  O14 O 0.21026 0.14876 0.23433 1.00000
  O15 O 0.46495 0.15234 0.72941 1.00000
  O16 O 0.84766 0.53505 0.22941 1.00000
  O17 O 0.08022 0.43199 0.72212 1.00000
  O18 O 0.56801 0.91978 0.22212 1.00000
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