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Cs4SiO4

Alexandria ALEX

Alex-ID: agm005263168 · Space group: P2_1/c (#14)

Basic Information

Formula
Cs4SiO4
Alex-ID
agm005263168
Elements
3
Sites
36
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
924.15
ų
Cell a
7.0332
Å
Cell b
11.7816
Å
Cell c
11.6604
Å
α angle
73.03
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Cs4SiO4
Cs
16.00 · 44.4%
Si
4.00 · 11.1%
O
16.00 · 44.4%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-2.2362
eV/atom
Corrected total energy
-195.2296
eV
Raw total energy
-183.9929
eV

Electronic Structure

Indirect band gap
2.1517
eV
Direct band gap
2.1978
eV
DOS at Fermi level
0.0000
Total magnetisation
0.5220
μB

Additional Information

Prototype ID

AB4C4_47_spg14

Decomposition

Cs4SiO4

Computed at

2024-10-08 01:38:16

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005263168).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005263168
data_agm005263168
_cell_length_a     7.03320
_cell_length_b     11.78164
_cell_length_c     11.66040
_cell_angle_alpha  73.03280
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       924.15446
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.59095 0.32057 0.05246 1.00000
  Cs2 Cs 0.10611 0.40822 0.15313 1.00000
  Cs3 Cs 0.90905 0.82057 0.05246 1.00000
  Cs4 Cs 0.26278 0.06381 0.38059 1.00000
  Cs5 Cs 0.39389 0.90822 0.15313 1.00000
  Cs6 Cs 0.73727 0.24604 0.39398 1.00000
  Cs7 Cs 0.23722 0.56381 0.38059 1.00000
  Cs8 Cs 0.23727 0.25396 0.60602 1.00000
  Cs9 Cs 0.76273 0.74604 0.39398 1.00000
  Cs10 Cs 0.76278 0.43619 0.61941 1.00000
  Cs11 Cs 0.26273 0.75396 0.60602 1.00000
  Cs12 Cs 0.60611 0.09178 0.84687 1.00000
  Cs13 Cs 0.73722 0.93619 0.61941 1.00000
  Cs14 Cs 0.09095 0.17943 0.94754 1.00000
  Cs15 Cs 0.89389 0.59178 0.84687 1.00000
  Cs16 Cs 0.40905 0.67943 0.94754 1.00000
  Si1 Si 0.84131 0.04146 0.22698 1.00000
  Si2 Si 0.65869 0.54146 0.22698 1.00000
  Si3 Si 0.34131 0.45854 0.77302 1.00000
  Si4 Si 0.15869 0.95854 0.77302 1.00000
  O1 O 0.75019 0.04729 0.09332 1.00000
  O2 O 0.94650 0.17086 0.22022 1.00000
  O3 O 0.74981 0.54729 0.09332 1.00000
  O4 O 0.49538 0.43252 0.26679 1.00000
  O5 O 0.55350 0.67086 0.22022 1.00000
  O6 O 0.83312 0.51382 0.32998 1.00000
  O7 O 0.00462 0.93252 0.26679 1.00000
  O8 O 0.33312 0.98618 0.67002 1.00000
  O9 O 0.66688 0.01382 0.32998 1.00000
  O10 O 0.99538 0.06748 0.73321 1.00000
  O11 O 0.16688 0.48618 0.67002 1.00000
  O12 O 0.44650 0.32914 0.77978 1.00000
  O13 O 0.50462 0.56748 0.73321 1.00000
  O14 O 0.25019 0.45271 0.90668 1.00000
  O15 O 0.05350 0.82914 0.77978 1.00000
  O16 O 0.24981 0.95271 0.90668 1.00000
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