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K5Pr4Si4O16F

Alexandria ALEX

Alex-ID: agm005264464 · Space group: I-4 (#82)

Basic Information

Formula
K5Pr4Si4O16F
Alex-ID
agm005264464
Elements
5
Sites
30
Space group
I-4 (#82)
Crystal system
tetragonal
Volume
436.73
ų
Cell a
9.2751
Å
Cell b
9.2751
Å
Cell c
9.2751
Å
α angle
95.20
°
β angle
95.20
°
γ angle
144.97
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
K5Pr4Si4O16F
K
5.00 · 16.7%
Pr
4.00 · 13.3%
Si
4.00 · 13.3%
O
16.00 · 53.3%
F
1.00 · 3.3%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-3.2768
eV/atom
Corrected total energy
-225.3958
eV
Raw total energy
-214.1591
eV

Electronic Structure

Indirect band gap
5.0270
eV
Direct band gap
5.0270
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB4C4D5E16_0_spg82

Decomposition

K5Pr4Si4O16F

Computed at

2022-12-13 03:11:11.019699

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005264464).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005264464
data_agm005264464
_cell_length_a     9.27511
_cell_length_b     9.27511
_cell_length_c     9.27511
_cell_angle_alpha  95.19529
_cell_angle_beta   95.19529
_cell_angle_gamma  144.97468
_cell_volume       436.72823
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  K1 K 0.59361 0.10313 0.69584 1.00000
  K2 K 0.40730 0.89778 0.30416 1.00000
  K3 K 0.10222 0.40639 0.50952 1.00000
  K4 K 0.89687 0.59270 0.49048 1.00000
  K5 K 0.00000 0.00000 0.00000 1.00000
  Pr1 Pr 0.59871 0.66586 0.30158 1.00000
  Pr2 Pr 0.36428 0.29713 0.69842 1.00000
  Pr3 Pr 0.70287 0.40129 0.06715 1.00000
  Pr4 Pr 0.33414 0.63572 0.93285 1.00000
  Si1 Si 0.76567 0.90618 0.64972 1.00000
  Si2 Si 0.25647 0.11596 0.35028 1.00000
  Si3 Si 0.88404 0.23433 0.14051 1.00000
  Si4 Si 0.09382 0.74353 0.85949 1.00000
  O1 O 0.61831 0.87848 0.50669 1.00000
  O2 O 0.37179 0.11162 0.49331 1.00000
  O3 O 0.88838 0.38169 0.26017 1.00000
  O4 O 0.12152 0.62821 0.73983 1.00000
  O5 O 0.56643 0.70946 0.75113 1.00000
  O6 O 0.95833 0.81530 0.24887 1.00000
  O7 O 0.18470 0.43357 0.14303 1.00000
  O8 O 0.29054 0.04167 0.85697 1.00000
  O9 O 0.04166 0.21196 0.75896 1.00000
  O10 O 0.45300 0.28270 0.24104 1.00000
  O11 O 0.71730 0.95834 0.17030 1.00000
  O12 O 0.78804 0.54700 0.82970 1.00000
  O13 O 0.86278 0.83683 0.57150 1.00000
  O14 O 0.26534 0.29128 0.42850 1.00000
  O15 O 0.70872 0.13722 0.97406 1.00000
  O16 O 0.16317 0.73466 0.02594 1.00000
  F1 F 0.50000 0.50000 0.00000 1.00000
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