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Ba4Ga22Sn

Alexandria ALEX

Alex-ID: agm005271675 · 空间群: I-43m (#217)

基础信息

化学式
Ba4Ga22Sn
Alex-ID
agm005271675
元素数
3
位点数
27
空间群
I-43m (#217)
晶系
cubic
体积
674.29
ų
晶胞参数 a
9.5680
Å
晶胞参数 b
9.5680
Å
晶胞参数 c
9.5680
Å
α 角
109.47
°
β 角
109.47
°
γ 角
109.47
°

组成

元素组成(原子分数)
组成信息
化学式
Ba4Ga22Sn
Ba
4.00 · 14.8%
Ga
22.00 · 81.5%
Sn
1.00 · 3.7%

能量与稳定性

凸包上方能量
0.1168
eV/atom
形成能
-0.2127
eV/atom
校正后总能量
-84.0814
eV
原始总能量
-84.0814
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0053
eV
费米能级态密度
17.0737
总磁矩
0.0000
μB

其他信息

原型 ID

AB4C22_1_spg217

分解产物

BaGa7 BaGa4 Sn

计算时间

2023-05-10 23:12:05.580346

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005271675).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005271675
data_agm005271675
_cell_length_a     9.56802
_cell_length_b     9.56802
_cell_length_c     9.56802
_cell_angle_alpha  109.47122
_cell_angle_beta   109.47122
_cell_angle_gamma  109.47122
_cell_volume       674.28666
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.37874 0.37874 0.37874 1.00000
  Ba2 Ba 0.00000 0.00000 0.62126 1.00000
  Ba3 Ba 0.62126 0.00000 0.00000 1.00000
  Ba4 Ba 0.00000 0.62126 0.00000 1.00000
  Ga1 Ga 0.71975 0.71975 0.71975 1.00000
  Ga2 Ga 0.00000 0.00000 0.28025 1.00000
  Ga3 Ga 0.28025 0.00000 0.00000 1.00000
  Ga4 Ga 0.00000 0.28025 0.00000 1.00000
  Ga5 Ga 0.75000 0.50000 0.25000 1.00000
  Ga6 Ga 0.25000 0.50000 0.75000 1.00000
  Ga7 Ga 0.50000 0.25000 0.75000 1.00000
  Ga8 Ga 0.50000 0.75000 0.25000 1.00000
  Ga9 Ga 0.25000 0.75000 0.50000 1.00000
  Ga10 Ga 0.75000 0.25000 0.50000 1.00000
  Ga11 Ga 0.55836 0.55836 0.83529 1.00000
  Ga12 Ga 0.72307 0.72307 0.16471 1.00000
  Ga13 Ga 0.44164 0.27693 0.00000 1.00000
  Ga14 Ga 0.55836 0.83529 0.55836 1.00000
  Ga15 Ga 0.27693 0.44164 0.00000 1.00000
  Ga16 Ga 0.72307 0.16471 0.72307 1.00000
  Ga17 Ga 0.27693 0.00000 0.44164 1.00000
  Ga18 Ga 0.44164 0.00000 0.27693 1.00000
  Ga19 Ga 0.83529 0.55836 0.55836 1.00000
  Ga20 Ga 0.00000 0.44164 0.27693 1.00000
  Ga21 Ga 0.00000 0.27693 0.44164 1.00000
  Ga22 Ga 0.16471 0.72307 0.72307 1.00000
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
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