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HEAS Data Platform · Materials Science Database

Ba8CuSi16

Alexandria ALEX

Alex-ID: agm005275975 · Space group: P1 (#1)

Basic Information

Formula
Ba8CuSi16
Alex-ID
agm005275975
Elements
3
Sites
25
Space group
P1 (#1)
Crystal system
triclinic
Volume
735.80
ų
Cell a
6.6485
Å
Cell b
9.6606
Å
Cell c
11.5253
Å
α angle
87.32
°
β angle
87.96
°
γ angle
84.60
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba8CuSi16
Ba
8.00 · 32.0%
Cu
1.00 · 4.0%
Si
16.00 · 64.0%

Energy & Stability

Energy above hull
0.1309
eV/atom
Formation energy
-0.2281
eV/atom
Corrected total energy
-112.0129
eV
Raw total energy
-112.0129
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
5.2980
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB8C16_26_spg1

Decomposition

Ba4Cu2Si21 BaSi2 Ba2CuSi3

Computed at

2023-05-10 16:09:19.774350

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005275975).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005275975
data_agm005275975
_cell_length_a     6.64850
_cell_length_b     9.66063
_cell_length_c     11.52528
_cell_angle_alpha  87.32267
_cell_angle_beta   87.96262
_cell_angle_gamma  84.60122
_cell_volume       735.80366
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.75056 0.99941 0.65076 1.00000
  Ba2 Ba 0.25001 0.50986 0.19404 1.00000
  Ba3 Ba 0.29270 0.97890 0.32242 1.00000
  Ba4 Ba 0.66908 0.47020 0.81099 1.00000
  Ba5 Ba 0.78288 0.84473 0.08067 1.00000
  Ba6 Ba 0.18662 0.63605 0.58817 1.00000
  Ba7 Ba 0.26841 0.17112 0.91834 1.00000
  Ba8 Ba 0.73201 0.34724 0.41776 1.00000
  Cu1 Cu 0.77987 0.04676 0.30216 1.00000
  Si1 Si 0.74781 0.40585 0.10988 1.00000
  Si2 Si 0.23101 0.09652 0.58889 1.00000
  Si3 Si 0.21540 0.64173 0.91100 1.00000
  Si4 Si 0.84598 0.82195 0.38203 1.00000
  Si5 Si 0.76804 0.19571 0.99003 1.00000
  Si6 Si 0.22950 0.31036 0.46382 1.00000
  Si7 Si 0.28853 0.82785 0.03493 1.00000
  Si8 Si 0.67874 0.68090 0.52724 1.00000
  Si9 Si 0.95399 0.19484 0.16481 1.00000
  Si10 Si 0.03601 0.30474 0.64779 1.00000
  Si11 Si 0.47665 0.80511 0.84883 1.00000
  Si12 Si 0.58000 0.67633 0.33855 1.00000
  Si13 Si 0.11513 0.89542 0.84982 1.00000
  Si14 Si 0.89575 0.72871 0.81591 1.00000
  Si15 Si 0.57660 0.20200 0.17026 1.00000
  Si16 Si 0.39871 0.29180 0.64580 1.00000
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