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Ho2MgCu(SiO3)4

Alexandria ALEX

Alex-ID: agm005285170 · Space group: P1 (#1)

Basic Information

Formula
Ho2MgCu(SiO3)4
Alex-ID
agm005285170
Elements
5
Sites
20
Space group
P1 (#1)
Crystal system
triclinic
Volume
259.02
ų
Cell a
5.2258
Å
Cell b
7.2816
Å
Cell c
7.7218
Å
α angle
116.77
°
β angle
87.69
°
γ angle
98.91
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ho2MgCu(SiO3)4
Ho
2.00 · 10.0%
Mg
1.00 · 5.0%
Cu
1.00 · 5.0%
Si
4.00 · 20.0%
O
12.00 · 60.0%

Energy & Stability

Energy above hull
0.2202
eV/atom
Formation energy
-3.1124
eV/atom
Corrected total energy
-158.3499
eV
Raw total energy
-149.9224
eV

Electronic Structure

Indirect band gap
0.1395
eV
Direct band gap
0.6133
eV
DOS at Fermi level
2.2862
Total magnetisation
0.9907
μB

Additional Information

Prototype ID

ABC2D4E12_46_spg1

Decomposition

Ho2Si2O7 Mg2SiO4 Cu SiO2

Computed at

2023-05-08 08:09:00.532988

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005285170).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005285170
data_agm005285170
_cell_length_a     5.22577
_cell_length_b     7.28155
_cell_length_c     7.72181
_cell_angle_alpha  116.77218
_cell_angle_beta   87.68769
_cell_angle_gamma  98.90658
_cell_volume       259.02402
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.99929 0.78871 0.57863 1.00000
  Ho2 Ho 0.02776 0.21363 0.41198 1.00000
  Mg1 Mg 0.09023 0.22918 0.97453 1.00000
  Cu1 Cu 0.82278 0.92995 0.00532 1.00000
  Si1 Si 0.42577 0.58710 0.77288 1.00000
  Si2 Si 0.60055 0.43511 0.22581 1.00000
  Si3 Si 0.59675 0.20086 0.77162 1.00000
  Si4 Si 0.43426 0.82061 0.23290 1.00000
  O1 O 0.66862 0.74176 0.75159 1.00000
  O2 O 0.31608 0.30409 0.21136 1.00000
  O3 O 0.72265 0.35422 0.00082 1.00000
  O4 O 0.34969 0.65037 0.00263 1.00000
  O5 O 0.83579 0.44425 0.35960 1.00000
  O6 O 0.17306 0.55638 0.64280 1.00000
  O7 O 0.65959 0.01111 0.25538 1.00000
  O8 O 0.33338 0.05456 0.77660 1.00000
  O9 O 0.50668 0.35050 0.68299 1.00000
  O10 O 0.56902 0.68520 0.32003 1.00000
  O11 O 0.85570 0.11210 0.66059 1.00000
  O12 O 0.17903 0.90067 0.35360 1.00000
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