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Ac(InGe)3

Alexandria ALEX

Alex-ID: agm005402828 · 空间群: Pm-3n (#223)

Alexandria Database API

基础信息

化学式
Ac(InGe)3
Alex-ID
agm005402828
元素数
3
位点数
14
空间群
Pm-3n (#223)
晶系
cubic
体积
426.23
ų
晶胞参数 a
7.5257
Å
晶胞参数 b
7.5257
Å
晶胞参数 c
7.5257
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
Ac(InGe)3
Ac
2.00 · 14.3%
Ge
6.00 · 42.9%
In
6.00 · 42.9%

能量与稳定性

凸包上方能量
0.4182
eV/atom
形成能
0.1416
eV/atom
校正后总能量
-50.5571
eV
原始总能量
-50.5571
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
5.7540
总磁矩
-0.0015
μB

其他信息

原型 ID

AB3C3_138_spg223

分解产物

AcGe2 Ge In

计算时间

2022-10-03 23:32:10

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005402828).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm005402828
data_agm005402828
_cell_length_a     7.52572
_cell_length_b     7.52572
_cell_length_c     7.52572
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       426.23034
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.50000 0.50000 0.50000 1.00000
  Ac2 Ac 0.00000 0.00000 0.00000 1.00000
  Ge1 Ge 0.25000 0.00000 0.50000 1.00000
  Ge2 Ge 0.00000 0.50000 0.25000 1.00000
  Ge3 Ge 0.50000 0.75000 0.00000 1.00000
  Ge4 Ge 0.75000 0.00000 0.50000 1.00000
  Ge5 Ge 0.00000 0.50000 0.75000 1.00000
  Ge6 Ge 0.50000 0.25000 0.00000 1.00000
  In1 In 0.00000 0.25000 0.50000 1.00000
  In2 In 0.00000 0.75000 0.50000 1.00000
  In3 In 0.50000 0.00000 0.75000 1.00000
  In4 In 0.75000 0.50000 0.00000 1.00000
  In5 In 0.50000 0.00000 0.25000 1.00000
  In6 In 0.25000 0.50000 0.00000 1.00000
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