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CeGe6

Alexandria ALEX

Alex-ID: agm005404682 · 空间群: Im-3m (#229)

基础信息

化学式
CeGe6
Alex-ID
agm005404682
元素数
2
位点数
7
空间群
Im-3m (#229)
晶系
cubic
体积
176.71
ų
晶胞参数 a
6.1230
Å
晶胞参数 b
6.1230
Å
晶胞参数 c
6.1230
Å
α 角
109.47
°
β 角
109.47
°
γ 角
109.47
°

组成

元素组成(原子分数)
组成信息
化学式
CeGe6
Ce
1.00 · 14.3%
Ge
6.00 · 85.7%

能量与稳定性

凸包上方能量
0.4885
eV/atom
形成能
0.1898
eV/atom
校正后总能量
-32.3094
eV
原始总能量
-32.3094
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
12.1271
总磁矩
1.6035
μB

其他信息

原型 ID

AB6_105_spg229

分解产物

CeGe3 Ge

计算时间

2022-12-15 16:22:49.777490

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005404682).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005404682
data_agm005404682
_cell_length_a     6.12300
_cell_length_b     6.12300
_cell_length_c     6.12300
_cell_angle_alpha  109.47122
_cell_angle_beta   109.47122
_cell_angle_gamma  109.47122
_cell_volume       176.71371
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.00000 0.00000 0.00000 1.00000
  Ge1 Ge 0.25000 0.75000 0.50000 1.00000
  Ge2 Ge 0.50000 0.75000 0.25000 1.00000
  Ge3 Ge 0.25000 0.50000 0.75000 1.00000
  Ge4 Ge 0.75000 0.25000 0.50000 1.00000
  Ge5 Ge 0.50000 0.25000 0.75000 1.00000
  Ge6 Ge 0.75000 0.50000 0.25000 1.00000
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