SiOs2
Alexandria ALEXAlex-ID: agm005455655 · Space group: I4/mcm (#140)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
AB2_815_spg72
Si3Os2 Os
2023-03-21 23:10:27.919496
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005455655).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm005455655
data_agm005455655
_cell_length_a 4.76074
_cell_length_b 4.76074
_cell_length_c 4.76074
_cell_angle_alpha 105.41568
_cell_angle_beta 105.41568
_cell_angle_gamma 117.92790
_cell_volume 81.68663
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Si1 Si 0.75000 0.75000 0.00000 1.00000
Si2 Si 0.25000 0.25000 0.00000 1.00000
Os1 Os 0.15986 0.34014 0.50000 1.00000
Os2 Os 0.84014 0.65986 0.50000 1.00000
Os3 Os 0.65986 0.15986 0.81973 1.00000
Os4 Os 0.34014 0.84014 0.18027 1.00000
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