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SiAg2

Alexandria ALEX

Alex-ID: agm005462889 · 空间群: C2/m (#12)

基础信息

化学式
SiAg2
Alex-ID
agm005462889
元素数
2
位点数
6
空间群
C2/m (#12)
晶系
monoclinic
体积
102.47
ų
晶胞参数 a
5.7247
Å
晶胞参数 b
5.7247
Å
晶胞参数 c
6.5689
Å
α 角
74.76
°
β 角
74.76
°
γ 角
29.65
°

组成

元素组成(原子分数)
组成信息
化学式
SiAg2
Si
2.00 · 33.3%
Ag
4.00 · 66.7%

能量与稳定性

凸包上方能量
0.2238
eV/atom
形成能
0.2238
eV/atom
校正后总能量
-20.9082
eV
原始总能量
-20.9082
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.1639
eV
费米能级态密度
0.9728
总磁矩
0.0000
μB

其他信息

原型 ID

AB2_4_spg12

分解产物

Ag Si

计算时间

2023-03-21 22:55:11.377298

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005462889).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005462889
data_agm005462889
_cell_length_a     5.72469
_cell_length_b     5.72469
_cell_length_c     6.56885
_cell_angle_alpha  74.76089
_cell_angle_beta   74.76089
_cell_angle_gamma  29.64697
_cell_volume       102.47494
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.79984 0.79984 0.13453 1.00000
  Si2 Si 0.20016 0.20016 0.86547 1.00000
  Ag1 Ag 0.45804 0.45804 0.81729 1.00000
  Ag2 Ag 0.13927 0.13927 0.48641 1.00000
  Ag3 Ag 0.86073 0.86073 0.51359 1.00000
  Ag4 Ag 0.54196 0.54196 0.18271 1.00000
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