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BaSi3

Alexandria ALEX

Alex-ID: agm005488734 · Space group: Pmmn (#59)

Basic Information

Formula
BaSi3
Alex-ID
agm005488734
Elements
2
Sites
8
Space group
Pmmn (#59)
Crystal system
orthorhombic
Volume
187.22
ų
Cell a
3.9135
Å
Cell b
6.0202
Å
Cell c
7.9464
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
BaSi3
Ba
2.00 · 25.0%
Si
6.00 · 75.0%

Energy & Stability

Energy above hull
0.1460
eV/atom
Formation energy
-0.1247
eV/atom
Corrected total energy
-37.3815
eV
Raw total energy
-37.3815
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.1135
eV
DOS at Fermi level
2.5025
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3_38_spg59

Decomposition

BaSi2 Si

Computed at

2023-03-19 04:11:17.564721

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005488734).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005488734
data_agm005488734
_cell_length_a     3.91349
_cell_length_b     6.02019
_cell_length_c     7.94640
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       187.21675
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.00000 0.60878 0.00000 1.00000
  Ba2 Ba 0.50000 0.39122 0.50000 1.00000
  Si1 Si 0.50000 0.10718 0.00000 1.00000
  Si2 Si 0.00000 0.89282 0.50000 1.00000
  Si3 Si 0.00000 0.12690 0.22492 1.00000
  Si4 Si 0.00000 0.12690 0.77508 1.00000
  Si5 Si 0.50000 0.87310 0.72492 1.00000
  Si6 Si 0.50000 0.87310 0.27508 1.00000
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