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Si3Ag

Alexandria ALEX

Alex-ID: agm005496936 · 空间群: C2/m (#12)

基础信息

化学式
Si3Ag
Alex-ID
agm005496936
元素数
2
位点数
8
空间群
C2/m (#12)
晶系
monoclinic
体积
132.78
ų
晶胞参数 a
5.4816
Å
晶胞参数 b
5.4816
Å
晶胞参数 c
5.5723
Å
α 角
67.24
°
β 角
67.24
°
γ 角
62.84
°

组成

元素组成(原子分数)
组成信息
化学式
Si3Ag
Si
6.00 · 75.0%
Ag
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.4432
eV/atom
形成能
0.4432
eV/atom
校正后总能量
-34.6952
eV
原始总能量
-34.6952
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0089
eV
费米能级态密度
2.2651
总磁矩
0.0000
μB

其他信息

原型 ID

AB3_765_spg2

分解产物

Ag Si

计算时间

2023-03-19 04:08:14.858433

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005496936).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005496936
data_agm005496936
_cell_length_a     5.48157
_cell_length_b     5.48157
_cell_length_c     5.57228
_cell_angle_alpha  67.23600
_cell_angle_beta   67.23600
_cell_angle_gamma  62.83743
_cell_volume       132.77532
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.86510 0.29545 0.74512 1.00000
  Si2 Si 0.29545 0.86510 0.74512 1.00000
  Si3 Si 0.79520 0.79520 0.73377 1.00000
  Si4 Si 0.13490 0.70455 0.25488 1.00000
  Si5 Si 0.70455 0.13490 0.25488 1.00000
  Si6 Si 0.20480 0.20480 0.26623 1.00000
  Ag1 Ag 0.64631 0.64631 0.25973 1.00000
  Ag2 Ag 0.35369 0.35369 0.74027 1.00000
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