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SiAg

Alexandria ALEX

Alex-ID: agm005496938 · 空间群: Pnma (#62)

基础信息

化学式
SiAg
Alex-ID
agm005496938
元素数
2
位点数
8
空间群
Pnma (#62)
晶系
orthorhombic
体积
145.90
ų
晶胞参数 a
3.6521
Å
晶胞参数 b
4.4932
Å
晶胞参数 c
8.8912
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
SiAg
Si
4.00 · 50.0%
Ag
4.00 · 50.0%

能量与稳定性

凸包上方能量
0.3045
eV/atom
形成能
0.3045
eV/atom
校正后总能量
-30.6607
eV
原始总能量
-30.6607
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.2269
eV
费米能级态密度
2.8814
总磁矩
0.0000
μB

其他信息

原型 ID

AB_69_spg62

分解产物

Ag Si

计算时间

2023-03-19 04:15:53.549226

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005496938).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005496938
data_agm005496938
_cell_length_a     3.65206
_cell_length_b     4.49315
_cell_length_c     8.89124
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       145.89850
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.75000 0.36233 0.04331 1.00000
  Si2 Si 0.25000 0.86233 0.45669 1.00000
  Si3 Si 0.75000 0.13767 0.54331 1.00000
  Si4 Si 0.25000 0.63767 0.95669 1.00000
  Ag1 Ag 0.75000 0.89008 0.19825 1.00000
  Ag2 Ag 0.25000 0.39008 0.30175 1.00000
  Ag3 Ag 0.75000 0.60992 0.69825 1.00000
  Ag4 Ag 0.25000 0.10992 0.80175 1.00000
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