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Th3Si2Tc3

Alexandria ALEX

Alex-ID: agm005575482 · Space group: Pnma (#62)

Basic Information

Formula
Th3Si2Tc3
Alex-ID
agm005575482
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
664.46
ų
Cell a
5.8028
Å
Cell b
7.4682
Å
Cell c
15.3324
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th3Si2Tc3
Th
12.00 · 37.5%
Si
8.00 · 25.0%
Tc
12.00 · 37.5%

Energy & Stability

Energy above hull
0.0324
eV/atom
Formation energy
-0.5071
eV/atom
Corrected total energy
-273.0723
eV
Raw total energy
-273.0723
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
26.4646
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C3_199_spg62

Decomposition

Th(SiTc2)2 ThSiTc Th7Tc3

Computed at

2023-06-06 07:52:30.340085

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005575482).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005575482
data_agm005575482
_cell_length_a     5.80279
_cell_length_b     7.46824
_cell_length_c     15.33243
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       664.45653
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.14350 0.47084 0.39149 1.00000
  Th2 Th 0.64350 0.02916 0.60851 1.00000
  Th3 Th 0.85650 0.52916 0.89149 1.00000
  Th4 Th 0.35650 0.97084 0.10851 1.00000
  Th5 Th 0.85650 0.52916 0.60851 1.00000
  Th6 Th 0.35650 0.97084 0.39149 1.00000
  Th7 Th 0.14350 0.47084 0.10851 1.00000
  Th8 Th 0.64350 0.02916 0.89149 1.00000
  Th9 Th 0.61931 0.32297 0.25000 1.00000
  Th10 Th 0.11931 0.17703 0.75000 1.00000
  Th11 Th 0.38069 0.67703 0.75000 1.00000
  Th12 Th 0.88069 0.82297 0.25000 1.00000
  Si1 Si 0.86379 0.10893 0.39734 1.00000
  Si2 Si 0.36379 0.39107 0.60266 1.00000
  Si3 Si 0.13621 0.89107 0.89734 1.00000
  Si4 Si 0.63621 0.60893 0.10266 1.00000
  Si5 Si 0.13621 0.89107 0.60266 1.00000
  Si6 Si 0.63621 0.60893 0.39734 1.00000
  Si7 Si 0.86379 0.10893 0.10266 1.00000
  Si8 Si 0.36379 0.39107 0.89734 1.00000
  Tc1 Tc 0.07695 0.17010 0.25000 1.00000
  Tc2 Tc 0.57695 0.32990 0.75000 1.00000
  Tc3 Tc 0.92305 0.82990 0.75000 1.00000
  Tc4 Tc 0.42305 0.67010 0.25000 1.00000
  Tc5 Tc 0.59463 0.31355 0.47086 1.00000
  Tc6 Tc 0.09463 0.18645 0.52914 1.00000
  Tc7 Tc 0.40537 0.68645 0.97086 1.00000
  Tc8 Tc 0.90537 0.81355 0.02914 1.00000
  Tc9 Tc 0.40537 0.68645 0.52914 1.00000
  Tc10 Tc 0.90537 0.81355 0.47086 1.00000
  Tc11 Tc 0.59463 0.31355 0.02914 1.00000
  Tc12 Tc 0.09463 0.18645 0.97086 1.00000
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