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Tl3In3Ga2

Alexandria ALEX

Alex-ID: agm005576014 · 空间群: Pnma (#62)

基础信息

化学式
Tl3In3Ga2
Alex-ID
agm005576014
元素数
3
位点数
32
空间群
Pnma (#62)
晶系
orthorhombic
体积
883.29
ų
晶胞参数 a
6.0599
Å
晶胞参数 b
8.4999
Å
晶胞参数 c
17.1485
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Tl3In3Ga2
Tl
12.00 · 37.5%
In
12.00 · 37.5%
Ga
8.00 · 25.0%

能量与稳定性

凸包上方能量
0.0652
eV/atom
形成能
0.0628
eV/atom
校正后总能量
-83.8552
eV
原始总能量
-83.8552
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0064
eV
费米能级态密度
16.4862
总磁矩
0.0000
μB

其他信息

原型 ID

A2B3C3_199_spg62

分解产物

Tl6In In Ga

计算时间

2023-06-05 20:11:23.576131

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005576014).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005576014
data_agm005576014
_cell_length_a     6.05989
_cell_length_b     8.49991
_cell_length_c     17.14847
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       883.29202
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tl1 Tl 0.10794 0.47521 0.38657 1.00000
  Tl2 Tl 0.60794 0.02479 0.61343 1.00000
  Tl3 Tl 0.89206 0.52479 0.88657 1.00000
  Tl4 Tl 0.39206 0.97521 0.11343 1.00000
  Tl5 Tl 0.89206 0.52479 0.61343 1.00000
  Tl6 Tl 0.39206 0.97521 0.38657 1.00000
  Tl7 Tl 0.10794 0.47521 0.11343 1.00000
  Tl8 Tl 0.60794 0.02479 0.88657 1.00000
  Tl9 Tl 0.63670 0.33414 0.25000 1.00000
  Tl10 Tl 0.13670 0.16586 0.75000 1.00000
  Tl11 Tl 0.36330 0.66586 0.75000 1.00000
  Tl12 Tl 0.86330 0.83414 0.25000 1.00000
  In1 In 0.15143 0.19585 0.25000 1.00000
  In2 In 0.65143 0.30415 0.75000 1.00000
  In3 In 0.84857 0.80415 0.75000 1.00000
  In4 In 0.34857 0.69585 0.25000 1.00000
  In5 In 0.60268 0.31397 0.47067 1.00000
  In6 In 0.10268 0.18603 0.52933 1.00000
  In7 In 0.39732 0.68603 0.97067 1.00000
  In8 In 0.89732 0.81397 0.02933 1.00000
  In9 In 0.39732 0.68603 0.52933 1.00000
  In10 In 0.89732 0.81397 0.47067 1.00000
  In11 In 0.60268 0.31397 0.02933 1.00000
  In12 In 0.10268 0.18603 0.97067 1.00000
  Ga1 Ga 0.88373 0.10510 0.38207 1.00000
  Ga2 Ga 0.38373 0.39490 0.61793 1.00000
  Ga3 Ga 0.11627 0.89490 0.88207 1.00000
  Ga4 Ga 0.61627 0.60510 0.11793 1.00000
  Ga5 Ga 0.11627 0.89490 0.61793 1.00000
  Ga6 Ga 0.61627 0.60510 0.38207 1.00000
  Ga7 Ga 0.88373 0.10510 0.11793 1.00000
  Ga8 Ga 0.38373 0.39490 0.88207 1.00000
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