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Tb3Ga3Os2

Alexandria ALEX

Alex-ID: agm005576088 · Space group: Pnma (#62)

Basic Information

Formula
Tb3Ga3Os2
Alex-ID
agm005576088
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
679.04
ų
Cell a
5.6481
Å
Cell b
7.9848
Å
Cell c
15.0568
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb3Ga3Os2
Tb
12.00 · 37.5%
Ga
12.00 · 37.5%
Os
8.00 · 25.0%

Energy & Stability

Energy above hull
0.0631
eV/atom
Formation energy
-0.4569
eV/atom
Corrected total energy
-196.3972
eV
Raw total energy
-196.3972
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0005
eV
DOS at Fermi level
21.0273
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C3_199_spg62

Decomposition

TbGa Tb2Ga3Os TbOs2

Computed at

2023-06-05 19:06:49.175827

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005576088).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005576088
data_agm005576088
_cell_length_a     5.64808
_cell_length_b     7.98476
_cell_length_c     15.05676
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       679.03795
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.10966 0.44934 0.39201 1.00000
  Tb2 Tb 0.60966 0.05066 0.60799 1.00000
  Tb3 Tb 0.89034 0.55066 0.89201 1.00000
  Tb4 Tb 0.39034 0.94934 0.10799 1.00000
  Tb5 Tb 0.89034 0.55066 0.60799 1.00000
  Tb6 Tb 0.39034 0.94934 0.39201 1.00000
  Tb7 Tb 0.10966 0.44934 0.10799 1.00000
  Tb8 Tb 0.60966 0.05066 0.89201 1.00000
  Tb9 Tb 0.63210 0.30529 0.25000 1.00000
  Tb10 Tb 0.13210 0.19471 0.75000 1.00000
  Tb11 Tb 0.36790 0.69471 0.75000 1.00000
  Tb12 Tb 0.86790 0.80529 0.25000 1.00000
  Ga1 Ga 0.11356 0.14800 0.25000 1.00000
  Ga2 Ga 0.61356 0.35200 0.75000 1.00000
  Ga3 Ga 0.88644 0.85200 0.75000 1.00000
  Ga4 Ga 0.38644 0.64800 0.25000 1.00000
  Ga5 Ga 0.61410 0.31647 0.46049 1.00000
  Ga6 Ga 0.11410 0.18353 0.53951 1.00000
  Ga7 Ga 0.38590 0.68353 0.96049 1.00000
  Ga8 Ga 0.88590 0.81647 0.03951 1.00000
  Ga9 Ga 0.38590 0.68353 0.53951 1.00000
  Ga10 Ga 0.88590 0.81647 0.46049 1.00000
  Ga11 Ga 0.61410 0.31647 0.03951 1.00000
  Ga12 Ga 0.11410 0.18353 0.96049 1.00000
  Os1 Os 0.89301 0.10786 0.39746 1.00000
  Os2 Os 0.39301 0.39214 0.60254 1.00000
  Os3 Os 0.10699 0.89214 0.89746 1.00000
  Os4 Os 0.60699 0.60786 0.10254 1.00000
  Os5 Os 0.10699 0.89214 0.60254 1.00000
  Os6 Os 0.60699 0.60786 0.39746 1.00000
  Os7 Os 0.89301 0.10786 0.10254 1.00000
  Os8 Os 0.39301 0.39214 0.89746 1.00000
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