导航

HEAS Data Platform · 材料科学计算数据库

NpSiOs

Alexandria ALEX

Alex-ID: agm005631455 · 空间群: Pnma (#62)

基础信息

化学式
NpSiOs
Alex-ID
agm005631455
元素数
3
位点数
12
空间群
Pnma (#62)
晶系
orthorhombic
体积
206.94
ų
晶胞参数 a
4.2164
Å
晶胞参数 b
6.6405
Å
晶胞参数 c
7.3908
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
NpSiOs
Np
4.00 · 33.3%
Si
4.00 · 33.3%
Os
4.00 · 33.3%

能量与稳定性

凸包上方能量
0.0315
eV/atom
形成能
-0.3657
eV/atom
校正后总能量
-122.7629
eV
原始总能量
-122.7629
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0150
eV
费米能级态密度
17.3337
总磁矩
12.4236
μB

其他信息

原型 ID

ABC_23_spg62

分解产物

Np2Si Np4Si6Os7 Np

计算时间

2023-06-18 11:13:44.592559

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005631455).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005631455
data_agm005631455
_cell_length_a     4.21642
_cell_length_b     6.64050
_cell_length_c     7.39082
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       206.93699
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Np1 Np 0.25000 0.84987 0.49057 1.00000
  Np2 Np 0.75000 0.34987 0.00943 1.00000
  Np3 Np 0.25000 0.65013 0.99057 1.00000
  Np4 Np 0.75000 0.15013 0.50943 1.00000
  Si1 Si 0.75000 0.88367 0.19551 1.00000
  Si2 Si 0.75000 0.61633 0.69551 1.00000
  Si3 Si 0.25000 0.11633 0.80449 1.00000
  Si4 Si 0.25000 0.38367 0.30449 1.00000
  Os1 Os 0.75000 0.56893 0.36630 1.00000
  Os2 Os 0.75000 0.93107 0.86630 1.00000
  Os3 Os 0.25000 0.06893 0.13370 1.00000
  Os4 Os 0.25000 0.43107 0.63370 1.00000
获取直接链接