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Ga2Sn4I9

Alexandria ALEX

Alex-ID: agm005641863 · Space group: C2/c (#15)

Basic Information

Formula
Ga2Sn4I9
Alex-ID
agm005641863
Elements
3
Sites
30
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
1,282.06
ų
Cell a
7.8411
Å
Cell b
7.9915
Å
Cell c
23.4911
Å
α angle
91.77
°
β angle
89.96
°
γ angle
60.64
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga2Sn4I9
Ga
4.00 · 13.3%
Sn
8.00 · 26.7%
I
18.00 · 60.0%

Energy & Stability

Energy above hull
0.1022
eV/atom
Formation energy
-0.3546
eV/atom
Corrected total energy
-82.6809
eV
Raw total energy
-82.6809
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0150
eV
DOS at Fermi level
11.7742
Total magnetisation
0.0038
μB

Additional Information

Prototype ID

A2B4C9_0_spg9

Decomposition

Ga2SnI6 SnI2 Ga

Computed at

2023-06-16 22:25:02.266649

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005641863).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005641863
data_agm005641863
_cell_length_a     7.84115
_cell_length_b     7.99149
_cell_length_c     23.49110
_cell_angle_alpha  91.76542
_cell_angle_beta   89.96194
_cell_angle_gamma  60.63517
_cell_volume       1282.05898
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.00588 0.99439 0.33709 1.00000
  Ga2 Ga 0.00015 0.00578 0.16293 1.00000
  Ga3 Ga 0.99412 0.00561 0.66291 1.00000
  Ga4 Ga 0.99985 0.99422 0.83707 1.00000
  Sn1 Sn 0.33669 0.33038 0.99465 1.00000
  Sn2 Sn 0.33284 0.33041 0.49464 1.00000
  Sn3 Sn 0.66331 0.66962 0.00535 1.00000
  Sn4 Sn 0.30296 0.34034 0.17582 1.00000
  Sn5 Sn 0.66716 0.66959 0.50536 1.00000
  Sn6 Sn 0.64348 0.65912 0.32419 1.00000
  Sn7 Sn 0.35652 0.34088 0.67581 1.00000
  Sn8 Sn 0.69704 0.65966 0.82418 1.00000
  I1 I 0.01987 0.31562 0.75159 1.00000
  I2 I 0.33576 0.68471 0.74830 1.00000
  I3 I 0.67032 0.00031 0.75011 1.00000
  I4 I 0.98013 0.68438 0.24841 1.00000
  I5 I 0.66424 0.31529 0.25170 1.00000
  I6 I 0.32968 0.99969 0.24989 1.00000
  I7 I 0.66131 0.97326 0.41726 1.00000
  I8 I 0.98849 0.35231 0.42080 1.00000
  I9 I 0.34327 0.65585 0.41663 1.00000
  I10 I 0.63488 0.02672 0.08263 1.00000
  I11 I 0.34045 0.64781 0.07924 1.00000
  I12 I 0.99899 0.34477 0.08339 1.00000
  I13 I 0.33869 0.02674 0.58274 1.00000
  I14 I 0.01151 0.64769 0.57920 1.00000
  I15 I 0.65673 0.34415 0.58337 1.00000
  I16 I 0.36512 0.97328 0.91737 1.00000
  I17 I 0.65955 0.35219 0.92076 1.00000
  I18 I 0.00101 0.65523 0.91661 1.00000
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