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In2Sn3F8

Alexandria ALEX

Alex-ID: agm005647580 · Space group: C2/c (#15)

Basic Information

Formula
In2Sn3F8
Alex-ID
agm005647580
Elements
3
Sites
26
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
665.12
ų
Cell a
7.3984
Å
Cell b
8.0139
Å
Cell c
12.8126
Å
α angle
98.20
°
β angle
90.00
°
γ angle
117.49
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
In2Sn3F8
In
4.00 · 15.4%
Sn
6.00 · 23.1%
F
16.00 · 61.5%

Energy & Stability

Energy above hull
0.0205
eV/atom
Formation energy
-2.3642
eV/atom
Corrected total energy
-119.2939
eV
Raw total energy
-119.2939
eV

Electronic Structure

Indirect band gap
3.0857
eV
Direct band gap
3.0857
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C8_35_spg15

Decomposition

SnF2 In InF2

Computed at

2023-06-15 21:34:42.096753

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005647580).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005647580
data_agm005647580
_cell_length_a     7.39840
_cell_length_b     8.01386
_cell_length_c     12.81256
_cell_angle_alpha  98.19647
_cell_angle_beta   90.00000
_cell_angle_gamma  117.49043
_cell_volume       665.11949
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.00406 0.47018 0.85419 1.00000
  In2 In 0.53388 0.52982 0.64581 1.00000
  In3 In 0.99594 0.52982 0.14581 1.00000
  In4 In 0.46612 0.47018 0.35419 1.00000
  Sn1 Sn 0.92907 1.00000 0.25000 1.00000
  Sn2 Sn 0.07093 0.00000 0.75000 1.00000
  Sn3 Sn 0.91055 0.26132 0.54280 1.00000
  Sn4 Sn 0.64923 0.73868 0.95720 1.00000
  Sn5 Sn 0.08945 0.73868 0.45720 1.00000
  Sn6 Sn 0.35077 0.26132 0.04280 1.00000
  F1 F 0.35205 0.52809 0.04310 1.00000
  F2 F 0.82395 0.47191 0.45690 1.00000
  F3 F 0.64795 0.47191 0.95690 1.00000
  F4 F 0.17605 0.52809 0.54310 1.00000
  F5 F 0.55945 0.37760 0.17637 1.00000
  F6 F 0.18185 0.62240 0.32363 1.00000
  F7 F 0.44055 0.62240 0.82363 1.00000
  F8 F 0.81815 0.37760 0.67637 1.00000
  F9 F 0.12946 0.24543 0.16188 1.00000
  F10 F 0.88403 0.75457 0.33812 1.00000
  F11 F 0.94672 0.13648 0.85544 1.00000
  F12 F 0.81024 0.86352 0.64456 1.00000
  F13 F 0.05328 0.86352 0.14456 1.00000
  F14 F 0.18976 0.13648 0.35544 1.00000
  F15 F 0.11597 0.24543 0.66188 1.00000
  F16 F 0.87054 0.75457 0.83812 1.00000
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