Navigation

HEAS Data Platform · Materials Science Database

Ga2IO6

Alexandria ALEX

Alex-ID: agm005648300 · Space group: P4_2/mnm (#136)

Basic Information

Formula
Ga2IO6
Alex-ID
agm005648300
Elements
3
Sites
18
Space group
P4_2/mnm (#136)
Crystal system
tetragonal
Volume
202.49
ų
Cell a
4.6669
Å
Cell b
4.6669
Å
Cell c
9.2969
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga2IO6
Ga
4.00 · 22.2%
I
2.00 · 11.1%
O
12.00 · 66.7%

Energy & Stability

Energy above hull
0.0442
eV/atom
Formation energy
-1.5197
eV/atom
Corrected total energy
-102.0701
eV
Raw total energy
-93.6426
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
5.0915
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C6_458_spg136

Decomposition

Ga2O3 Ga(IO3)3 O2

Computed at

2023-07-09 00:56:20.697435

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005648300).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005648300
data_agm005648300
_cell_length_a     4.66695
_cell_length_b     4.66695
_cell_length_c     9.29692
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       202.49033
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.50000 0.50000 0.33394 1.00000
  Ga2 Ga 0.50000 0.50000 0.66606 1.00000
  Ga3 Ga 0.00000 0.00000 0.16606 1.00000
  Ga4 Ga 0.00000 0.00000 0.83394 1.00000
  I1 I 0.50000 0.50000 0.00000 1.00000
  I2 I 0.00000 0.00000 0.50000 1.00000
  O1 O 0.69429 0.69429 0.16743 1.00000
  O2 O 0.69429 0.69429 0.83257 1.00000
  O3 O 0.69214 0.69214 0.50000 1.00000
  O4 O 0.80786 0.19214 0.00000 1.00000
  O5 O 0.80571 0.19429 0.33257 1.00000
  O6 O 0.80571 0.19429 0.66743 1.00000
  O7 O 0.19429 0.80571 0.33257 1.00000
  O8 O 0.19429 0.80571 0.66743 1.00000
  O9 O 0.19214 0.80786 0.00000 1.00000
  O10 O 0.30786 0.30786 0.50000 1.00000
  O11 O 0.30571 0.30571 0.16743 1.00000
  O12 O 0.30571 0.30571 0.83257 1.00000
Get direct link