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ThInSn

Alexandria ALEX

Alex-ID: agm005656947 · 空间群: Cmcm (#63)

基础信息

化学式
ThInSn
Alex-ID
agm005656947
元素数
3
位点数
6
空间群
Cmcm (#63)
晶系
orthorhombic
体积
170.16
ų
晶胞参数 a
5.9690
Å
晶胞参数 b
6.5825
Å
晶胞参数 c
5.2597
Å
α 角
90.00
°
β 角
124.57
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
ThInSn
Th
2.00 · 33.3%
In
2.00 · 33.3%
Sn
2.00 · 33.3%

能量与稳定性

凸包上方能量
0.2361
eV/atom
形成能
-0.2165
eV/atom
校正后总能量
-29.6885
eV
原始总能量
-29.6885
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
4.1737
总磁矩
0.0000
μB

其他信息

原型 ID

ABC_7752_spg40

分解产物

Th5Sn4 ThIn3 ThSn2

计算时间

2023-06-17 16:55:21.575655

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005656947).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005656947
data_agm005656947
_cell_length_a     5.96896
_cell_length_b     6.58246
_cell_length_c     5.25967
_cell_angle_alpha  90.00000
_cell_angle_beta   124.57101
_cell_angle_gamma  90.00000
_cell_volume       170.16449
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.66932 0.75000 0.83863 1.00000
  Th2 Th 0.33068 0.25000 0.16137 1.00000
  In1 In 0.30641 0.75000 0.11283 1.00000
  In2 In 0.69359 0.25000 0.88717 1.00000
  Sn1 Sn 0.00000 0.50000 0.50000 1.00000
  Sn2 Sn 0.00000 0.00000 0.50000 1.00000
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