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Y4Ga5Si2

Alexandria ALEX

Alex-ID: agm005657528 · Space group: P2/m (#10)

Basic Information

Formula
Y4Ga5Si2
Alex-ID
agm005657528
Elements
3
Sites
11
Space group
P2/m (#10)
Crystal system
monoclinic
Volume
234.26
ų
Cell a
4.2464
Å
Cell b
6.9577
Å
Cell c
7.9293
Å
α angle
90.69
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Y4Ga5Si2
Y
4.00 · 36.4%
Ga
5.00 · 45.5%
Si
2.00 · 18.2%

Energy & Stability

Energy above hull
0.0435
eV/atom
Formation energy
-0.6555
eV/atom
Corrected total energy
-59.0554
eV
Raw total energy
-59.0554
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
7.6637
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B4C5_870_spg10

Decomposition

YGa2 Y2Ga3Si YSi

Computed at

2023-06-22 14:01:35.090131

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005657528).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005657528
data_agm005657528
_cell_length_a     4.24644
_cell_length_b     6.95771
_cell_length_c     7.92928
_cell_angle_alpha  90.69358
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       234.25738
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.50000 0.75682 0.60821 1.00000
  Y2 Y 0.50000 0.22028 0.86363 1.00000
  Y3 Y 0.50000 0.24318 0.39179 1.00000
  Y4 Y 0.50000 0.77972 0.13637 1.00000
  Ga1 Ga 0.00000 0.55491 0.34255 1.00000
  Ga2 Ga 0.00000 0.12724 0.12172 1.00000
  Ga3 Ga 0.00000 0.50000 0.00000 1.00000
  Ga4 Ga 0.00000 0.87276 0.87828 1.00000
  Ga5 Ga 0.00000 0.44509 0.65745 1.00000
  Si1 Si 0.00000 0.08253 0.62919 1.00000
  Si2 Si 0.00000 0.91747 0.37081 1.00000
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