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Tm2Ga3Rh4

Alexandria ALEX

Alex-ID: agm005661683 · Space group: Cmce (#64)

Basic Information

Formula
Tm2Ga3Rh4
Alex-ID
agm005661683
Elements
3
Sites
18
Space group
Cmce (#64)
Crystal system
orthorhombic
Volume
306.37
ų
Cell a
5.6257
Å
Cell b
7.3712
Å
Cell c
7.9055
Å
α angle
90.00
°
β angle
110.84
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm2Ga3Rh4
Tm
4.00 · 22.2%
Ga
6.00 · 33.3%
Rh
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.8774
eV/atom
Corrected total energy
-110.6658
eV
Raw total energy
-110.6658
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0978
eV
DOS at Fermi level
5.5433
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_75_spg64

Decomposition

Tm2Ga3Rh4

Computed at

2023-06-27 00:59:41.634877

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005661683).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005661683
data_agm005661683
_cell_length_a     5.62568
_cell_length_b     7.37116
_cell_length_c     7.90547
_cell_angle_alpha  90.00000
_cell_angle_beta   110.84304
_cell_angle_gamma  90.00000
_cell_volume       306.36907
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.10753 0.58317 0.21506 1.00000
  Tm2 Tm 0.89247 0.41683 0.78494 1.00000
  Tm3 Tm 0.39247 0.08317 0.78494 1.00000
  Tm4 Tm 0.60753 0.91683 0.21506 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  Ga2 Ga 0.50000 0.50000 0.00000 1.00000
  Ga3 Ga 0.52210 0.75000 0.54420 1.00000
  Ga4 Ga 0.97790 0.25000 0.45580 1.00000
  Ga5 Ga 0.47790 0.25000 0.45580 1.00000
  Ga6 Ga 0.02210 0.75000 0.54420 1.00000
  Rh1 Rh 0.69115 0.75000 0.88231 1.00000
  Rh2 Rh 0.80885 0.25000 0.11769 1.00000
  Rh3 Rh 0.30885 0.25000 0.11769 1.00000
  Rh4 Rh 0.19115 0.75000 0.88231 1.00000
  Rh5 Rh 0.17825 0.97581 0.35650 1.00000
  Rh6 Rh 0.82175 0.02419 0.64350 1.00000
  Rh7 Rh 0.32175 0.47581 0.64350 1.00000
  Rh8 Rh 0.67825 0.52419 0.35650 1.00000
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