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Al3ZnGa2

Alexandria ALEX

Alex-ID: agm005663584 · Space group: P-1 (#2)

Basic Information

Formula
Al3ZnGa2
Alex-ID
agm005663584
Elements
3
Sites
24
Space group
P-1 (#2)
Crystal system
triclinic
Volume
405.15
ų
Cell a
4.9760
Å
Cell b
7.0763
Å
Cell c
17.6404
Å
α angle
73.93
°
β angle
48.01
°
γ angle
61.56
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Al3ZnGa2
Al
12.00 · 50.0%
Zn
4.00 · 16.7%
Ga
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0526
eV/atom
Formation energy
0.0334
eV/atom
Corrected total energy
-73.4918
eV
Raw total energy
-73.4918
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0322
eV
DOS at Fermi level
7.2756
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2080_spg2

Decomposition

Al6Zn Al3Zn4 AlGa4

Computed at

2023-08-07 05:26:47.466163

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005663584).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005663584
data_agm005663584
_cell_length_a     4.97602
_cell_length_b     7.07632
_cell_length_c     17.64040
_cell_angle_alpha  73.93311
_cell_angle_beta   48.00982
_cell_angle_gamma  61.56415
_cell_volume       405.14520
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Al1 Al 0.51750 0.65618 0.27062 1.00000
  Al2 Al 0.48250 0.34382 0.72938 1.00000
  Al3 Al 0.35085 0.47998 0.10510 1.00000
  Al4 Al 0.05701 0.44099 0.31254 1.00000
  Al5 Al 0.64915 0.52002 0.89490 1.00000
  Al6 Al 0.94299 0.55901 0.68746 1.00000
  Al7 Al 0.77104 0.39080 0.52049 1.00000
  Al8 Al 0.18894 0.31227 0.93722 1.00000
  Al9 Al 0.22896 0.60920 0.47951 1.00000
  Al10 Al 0.81106 0.68773 0.06278 1.00000
  Al11 Al 0.97584 0.85892 0.22923 1.00000
  Al12 Al 0.02416 0.14108 0.77077 1.00000
  Zn1 Zn 0.42252 0.06394 0.19314 1.00000
  Zn2 Zn 0.14775 0.02264 0.39639 1.00000
  Zn3 Zn 0.57748 0.93606 0.80686 1.00000
  Zn4 Zn 0.85225 0.97736 0.60361 1.00000
  Ga1 Ga 0.59457 0.23894 0.35551 1.00000
  Ga2 Ga 0.88451 0.27762 0.14724 1.00000
  Ga3 Ga 0.40543 0.76106 0.64449 1.00000
  Ga4 Ga 0.11549 0.72238 0.85276 1.00000
  Ga5 Ga 0.26696 0.89388 0.02094 1.00000
  Ga6 Ga 0.69406 0.81054 0.43572 1.00000
  Ga7 Ga 0.73304 0.10612 0.97906 1.00000
  Ga8 Ga 0.30594 0.18946 0.56428 1.00000
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