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In10(GaHg)3

Alexandria ALEX

Alex-ID: agm005670140 · Space group: P-62m (#189)

Basic Information

Formula
In10(GaHg)3
Alex-ID
agm005670140
Elements
3
Sites
16
Space group
P-62m (#189)
Crystal system
hexagonal
Volume
416.40
ų
Cell a
6.0646
Å
Cell b
8.9041
Å
Cell c
8.9041
Å
α angle
120.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
In10(GaHg)3
In
10.00 · 62.5%
Ga
3.00 · 18.8%
Hg
3.00 · 18.8%

Energy & Stability

Energy above hull
0.0876
eV/atom
Formation energy
0.0876
eV/atom
Corrected total energy
-36.4659
eV
Raw total energy
-36.4659
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
6.3159
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B3C10_0_spg189

Decomposition

In Ga Hg

Computed at

2023-06-19 14:48:53.821473

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005670140).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005670140
data_agm005670140
_cell_length_a     6.06457
_cell_length_b     8.90411
_cell_length_c     8.90411
_cell_angle_alpha  119.99999
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       416.40054
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.25578 0.66667 0.33333 1.00000
  In2 In 0.25578 0.33333 0.66667 1.00000
  In3 In 0.74422 0.33333 0.66667 1.00000
  In4 In 0.74422 0.66667 0.33333 1.00000
  In5 In 0.50000 0.00000 0.77200 1.00000
  In6 In 0.50000 0.77200 0.00000 1.00000
  In7 In 0.50000 0.22800 0.22800 1.00000
  In8 In 0.00000 1.00000 0.22429 1.00000
  In9 In 0.00000 0.22429 1.00000 1.00000
  In10 In 0.00000 0.77571 0.77571 1.00000
  Ga1 Ga 0.50000 0.00000 0.39543 1.00000
  Ga2 Ga 0.50000 0.39543 0.00000 1.00000
  Ga3 Ga 0.50000 0.60457 0.60457 1.00000
  Hg1 Hg 0.00000 0.00000 0.59072 1.00000
  Hg2 Hg 0.00000 0.59072 0.00000 1.00000
  Hg3 Hg 0.00000 0.40928 0.40928 1.00000
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