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Rb5(GaO3)2

Alexandria ALEX

Alex-ID: agm005672636 · Space group: C2/c (#15)

Basic Information

Formula
Rb5(GaO3)2
Alex-ID
agm005672636
Elements
3
Sites
26
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
580.40
ų
Cell a
6.5908
Å
Cell b
6.5908
Å
Cell c
14.9551
Å
α angle
81.83
°
β angle
81.83
°
γ angle
65.01
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Rb5(GaO3)2
Rb
10.00 · 38.5%
Ga
4.00 · 15.4%
O
12.00 · 46.2%

Energy & Stability

Energy above hull
0.0426
eV/atom
Formation energy
-1.8197
eV/atom
Corrected total energy
-128.6035
eV
Raw total energy
-120.1760
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0004
eV
DOS at Fermi level
27.1737
Total magnetisation
2.2338
μB

Additional Information

Prototype ID

A2B5C6_3_spg15

Decomposition

Rb2O3 Rb3GaO3 RbGaO2

Computed at

2023-06-20 08:58:46.433174

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005672636).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005672636
data_agm005672636
_cell_length_a     6.59077
_cell_length_b     6.59077
_cell_length_c     14.95505
_cell_angle_alpha  81.82980
_cell_angle_beta   81.82981
_cell_angle_gamma  65.01288
_cell_volume       580.39796
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.67388 0.20250 0.99570 1.00000
  Rb2 Rb 0.79750 0.32612 0.50430 1.00000
  Rb3 Rb 0.32612 0.79750 0.00430 1.00000
  Rb4 Rb 0.20250 0.67388 0.49570 1.00000
  Rb5 Rb 0.78532 0.90732 0.70993 1.00000
  Rb6 Rb 0.09268 0.21468 0.79007 1.00000
  Rb7 Rb 0.21468 0.09268 0.29007 1.00000
  Rb8 Rb 0.90732 0.78532 0.20993 1.00000
  Rb9 Rb 0.39671 0.60329 0.75000 1.00000
  Rb10 Rb 0.60329 0.39671 0.25000 1.00000
  Ga1 Ga 0.36596 0.08729 0.57418 1.00000
  Ga2 Ga 0.91271 0.63404 0.92582 1.00000
  Ga3 Ga 0.63404 0.91271 0.42582 1.00000
  Ga4 Ga 0.08729 0.36596 0.07418 1.00000
  O1 O 0.13365 0.01109 0.62603 1.00000
  O2 O 0.98891 0.86635 0.87397 1.00000
  O3 O 0.86635 0.98891 0.37397 1.00000
  O4 O 0.01109 0.13365 0.12603 1.00000
  O5 O 0.40009 0.28501 0.64123 1.00000
  O6 O 0.71499 0.59991 0.85877 1.00000
  O7 O 0.59991 0.71499 0.35877 1.00000
  O8 O 0.28501 0.40009 0.14123 1.00000
  O9 O 0.64107 0.81768 0.55347 1.00000
  O10 O 0.18232 0.35893 0.94653 1.00000
  O11 O 0.35893 0.18232 0.44653 1.00000
  O12 O 0.81768 0.64107 0.05347 1.00000
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