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Cs2In12Ga7

Alexandria ALEX

Alex-ID: agm005673790 · Space group: P-3 (#147)

Basic Information

Formula
Cs2In12Ga7
Alex-ID
agm005673790
Elements
3
Sites
21
Space group
P-3 (#147)
Crystal system
trigonal
Volume
580.19
ų
Cell a
4.9866
Å
Cell b
11.5909
Å
Cell c
11.5909
Å
α angle
120.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Cs2In12Ga7
Cs
2.00 · 9.5%
In
12.00 · 57.1%
Ga
7.00 · 33.3%

Energy & Stability

Energy above hull
0.0518
eV/atom
Formation energy
-0.0132
eV/atom
Corrected total energy
-56.4317
eV
Raw total energy
-56.4317
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
7.5687
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B7C12_16_spg147

Decomposition

CsGa7 In CsGa3

Computed at

2023-06-21 08:05:06.324214

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005673790).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005673790
data_agm005673790
_cell_length_a     4.98657
_cell_length_b     11.59090
_cell_length_c     11.59092
_cell_angle_alpha  120.00011
_cell_angle_beta   90.00016
_cell_angle_gamma  89.99996
_cell_volume       580.18579
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.24663 0.33333 0.66667 1.00000
  Cs2 Cs 0.75337 0.66667 0.33333 1.00000
  In1 In 0.25419 0.64308 0.06687 1.00000
  In2 In 0.25419 0.42379 0.35692 1.00000
  In3 In 0.25419 0.93313 0.57621 1.00000
  In4 In 0.74581 0.35692 0.93313 1.00000
  In5 In 0.74581 0.57621 0.64308 1.00000
  In6 In 0.74581 0.06687 0.42379 1.00000
  In7 In 0.22938 0.11627 0.25028 1.00000
  In8 In 0.22938 0.13401 0.88373 1.00000
  In9 In 0.22938 0.74972 0.86599 1.00000
  In10 In 0.77062 0.88373 0.74972 1.00000
  In11 In 0.77062 0.86599 0.11627 1.00000
  In12 In 0.77062 0.25028 0.13401 1.00000
  Ga1 Ga 0.50000 0.00000 0.00000 1.00000
  Ga2 Ga 0.25304 0.90317 0.31385 1.00000
  Ga3 Ga 0.25304 0.41068 0.09683 1.00000
  Ga4 Ga 0.25304 0.68615 0.58932 1.00000
  Ga5 Ga 0.74696 0.09683 0.68615 1.00000
  Ga6 Ga 0.74696 0.58932 0.90317 1.00000
  Ga7 Ga 0.74696 0.31385 0.41068 1.00000
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